PartNumber | IRF5305STRLPBF | IRF5305STRLPB | IRF5305STRLPBF,IRF5305SP |
Description | MOSFET MOSFT PCh -55V -31A 60mOhm 42nC | ||
Manufacturer | Infineon | IR | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 55 V | - | - |
Id Continuous Drain Current | 31 A | - | - |
Rds On Drain Source Resistance | 60 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 42 nC | - | - |
Pd Power Dissipation | 110 W | - | - |
Configuration | Single | - | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Width | 6.22 mm | - | - |
Brand | Infineon / IR | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP001564840 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Package Case | - | TO-252-3 | - |
Pd Power Dissipation | - | 110 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | - 31 A | - |
Vds Drain Source Breakdown Voltage | - | - 55 V | - |
Rds On Drain Source Resistance | - | 60 mOhms | - |
Qg Gate Charge | - | 42 nC | - |