IXTH30N50P

IXTH30N50P
Mfr. #:
IXTH30N50P
Manufacturer:
Littelfuse
Description:
MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
Lifecycle:
New from this manufacturer.
Datasheet:
IXTH30N50P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH30N50P DatasheetIXTH30N50P Datasheet (P4-P5)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
30 A
Rds On - Drain-Source Resistance:
165 mOhms
Vgs th - Gate-Source Threshold Voltage:
5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
70 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
460 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PolarHV
Packaging:
Tube
Height:
21.46 mm
Length:
16.26 mm
Series:
IXTH30N50
Transistor Type:
1 N-Channel
Type:
PolarHV Power MOSFET
Width:
5.3 mm
Brand:
IXYS
Forward Transconductance - Min:
17 S
Fall Time:
21 ns
Product Type:
MOSFET
Rise Time:
27 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
75 ns
Typical Turn-On Delay Time:
25 ns
Unit Weight:
0.229281 oz
Tags
IXTH30N5, IXTH30N, IXTH30, IXTH3, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
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SUPERFET2 650V, 150 MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.133ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
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Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
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SUPERFET2 104MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissi
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Part # Mfg. Description Stock Price
IXTH30N50P
DISTI # IXTH30N50P-ND
IXYS CorporationMOSFET N-CH 500V 30A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$5.6377
IXTH30N50P
DISTI # 747-IXTH30N50P
IXYS CorporationMOSFET 30.0 Amps 500 V 0.2 Ohm Rds
RoHS: Compliant
0
  • 1:$8.0400
  • 10:$7.1900
  • 25:$6.2500
  • 50:$6.1300
  • 100:$5.8900
  • 250:$5.0300
  • 500:$4.7700
  • 1000:$4.0300
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Availability
Stock:
100
On Order:
2083
Enter Quantity:
Current price of IXTH30N50P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$8.04
$8.04
10
$7.19
$71.90
25
$6.25
$156.25
50
$6.13
$306.50
100
$5.89
$589.00
250
$5.03
$1 257.50
500
$4.77
$2 385.00
1000
$4.03
$4 030.00
2500
$3.45
$8 625.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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