PartNumber | IXTH30N25L2 | IXTH300N04T2 | IXTH30N25 |
Description | Discrete Semiconductor Modules Disc Mosfet N-CH Linear L2 TO-247AD | MOSFET Trench T2 Power MOSFET | MOSFET 30 Amps 250V 0.075 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | - | Y |
Product | Power MOSFET Modules | - | - |
Type | Linear L2 | - | - |
Vgs Gate Source Voltage | 20 V | - | 20 V |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Packaging | Tube | Tube | Tube |
Configuration | Single | - | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 23 ns | - | 17 ns |
Id Continuous Drain Current | 30 A | 300 A | 30 A |
Pd Power Dissipation | 355 W | - | 200 W |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 140 mOhms | 2.5 mOhms | 75 mOhms |
Rise Time | 78 ns | - | 19 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | Linear L2 | HiPerFET | - |
Typical Turn Off Delay Time | 65 ns | - | 79 ns |
Typical Turn On Delay Time | 22 ns | - | 19 ns |
Vds Drain Source Breakdown Voltage | 250 V | 40 V | 250 V |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Technology | - | Si | Si |
Series | - | IXTH300N04 | IXTH30N25 |
Unit Weight | - | 0.056438 oz | 0.229281 oz |
Number of Channels | - | - | 1 Channel |
Channel Mode | - | - | Enhancement |
Height | - | - | 21.46 mm |
Length | - | - | 16.26 mm |
Transistor Type | - | - | 1 N-Channel |
Width | - | - | 5.3 mm |