IXTH3N120

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1.2 kV

Id - Continuous Drain Current:

3 A

Rds On - Drain-Source Resistance:

4.5 Ohms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

39 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

150 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

21.46 mm

Length:

16.26 mm

Series:

IXTH3N120

Transistor Type:

1 N-Channel

Type:

High Voltage Power MOSFET

Width:

5.3 mm

Brand:

IXYS

Forward Transconductance - Min:

1.5 S

Fall Time:

18 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

32 ns

Typical Turn-On Delay Time:

17 ns

Unit Weight:

0.229281 oz

Tags

IXTH3N1, IXTH3N, IXTH3, IXTH, IXT