 | | | |
| PartNumber | IXTH3N150 | IXTH3N120 | IXTH3N100P |
| Description | MOSFET High Voltage Power MOSFET | MOSFET 3 Amps 1200V 4.500 Rds | MOSFET 3 Amps 1000V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1.5 kV | 1.2 kV | 1 kV |
| Id Continuous Drain Current | 3 A | 3 A | 3 A |
| Rds On Drain Source Resistance | 7.3 Ohms | 4.5 Ohms | 4.8 Ohms |
| Configuration | Single | Single | Single |
| Packaging | Tube | Tube | Tube |
| Series | IXTH3N150 | IXTH3N120 | IXTH3N100 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.056438 oz | 0.229281 oz | 0.229281 oz |
| RoHS | - | Y | Y |
| Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 39 nC | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 150 W | 125 W |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 21.46 mm | 21.46 mm |
| Length | - | 16.26 mm | 16.26 mm |
| Type | - | High Voltage Power MOSFET | - |
| Width | - | 5.3 mm | 5.3 mm |
| Forward Transconductance Min | - | 1.5 S | - |
| Fall Time | - | 18 ns | 29 ns |
| Rise Time | - | 15 ns | 27 ns |
| Typical Turn Off Delay Time | - | 32 ns | 75 ns |
| Typical Turn On Delay Time | - | 17 ns | 22 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Littelfuse |
IXTH3N200P3HV | Discrete Semiconductor Modules Disc Mosfet N-CH Std-Polar3 TO-247AD | |
| IXTH3N150 | MOSFET High Voltage Power MOSFET | ||
| IXTH3N120 | MOSFET 3 Amps 1200V 4.500 Rds | ||
| IXTH3N100P | MOSFET 3 Amps 1000V | ||
| IXTH3N200P3HV | MOSFET N-CH 2000V 3A TO-247 | ||
| IXTH3N150 | IGBT Transistors MOSFET High Voltage Power MOSFET | ||
| IXTH3N120 | IGBT Transistors MOSFET 3 Amps 1200V 4.500 Rds | ||
| IXTH3N100P | MOSFET 3 Amps 1000V |