We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| IAUS165N08S5N029ATMA1 DISTI # V72:2272_22709243 | Infineon Technologies AG | N-channel Enhancement mode Power MOSFET | 3600 |
|
| IAUS165N08S5N029ATMA1 DISTI # IAUS165N08S5N029ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 80V 660A PG-HSOG-8-1 RoHS: Compliant Min Qty: 1800 Container: Tape & Reel (TR) | 1800In Stock |
|
| IAUS165N08S5N029ATMA1 DISTI # IAUS165N08S5N029ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 80V 660A PG-HSOG-8-1 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1800In Stock |
|
| IAUS165N08S5N029ATMA1 DISTI # IAUS165N08S5N029ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 80V 660A PG-HSOG-8-1 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1800In Stock |
|
| IAUS165N08S5N029ATMA1 DISTI # 32023019 | Infineon Technologies AG | N-channel Enhancement mode Power MOSFET | 3600 |
|
| IAUS165N08S5N029ATMA1 DISTI # 32669696 | Infineon Technologies AG | N-channel Enhancement mode Power MOSFET | 1800 |
|
| IAUS165N08S5N029ATMA1 DISTI # SP001643350 | Infineon Technologies AG | Transistor MOSFET N-CH 80V 165A 8-Pin HSOG T/R (Alt: SP001643350) RoHS: Compliant Min Qty: 1800 Container: Tape and Reel | Europe - 3600 |
|
| IAUS165N08S5N029ATMA1 DISTI # IAUS165N08S5N029ATMA1 | Infineon Technologies AG | Transistor MOSFET N-CH 80V 165A 8-Pin HSOG T/R - Tape and Reel (Alt: IAUS165N08S5N029ATMA1) RoHS: Compliant Min Qty: 1800 Container: Reel | Americas - 0 |
|
| IAUS165N08S5N029ATMA1 DISTI # 726-IAUS165N08S5N029 | Infineon Technologies AG | MOSFET RoHS: Compliant | 100 |
|
| IAUS165N08S5N029ATMA1 DISTI # IAUS165N08S5N029 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,80V,165A,Idm:660A,167W | 1798 |
|
| IAUS165N08S5N029ATMA1 DISTI # XSKDRABV0042292 | Infineon Technologies AG | RoHS: Compliant | 5400 in Stock0 on Order |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: IAUS165N08S5N029ATMA1 OMO.#: OMO-IAUS165N08S5N029ATMA1 |
MOSFET |
|
Mfr.#: IAUS165N08S5N029ATMA1 |
MOSFET N-CH 80V 660A PG-HSOG-8-1 |
