PartNumber | IAUS165N08S5N029ATMA1 | IAUS200N08S5N023ATMA1 | IAUS240N08S5N019ATMA1 |
Description | MOSFET | MOSFET OptiMOS -5 Power-Transistor | MOSFET OptiMOS -5 Power-Transistor |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | HSOG-8 | HSOG-8 | HSOG-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
Id Continuous Drain Current | 165 A | 200 A | 240 A |
Rds On Drain Source Resistance | 4.4 mOhms | 3.7 mOhms | 3 mOhms |
Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | 2.2 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 90 nC | 110 nC | 130 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 167 W | 200 W | 230 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 29 ns | 32 ns | 36 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 9 ns | 11 ns | 12 ns |
Factory Pack Quantity | 1800 | 1800 | 1800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 23 ns | 30 ns | 35 ns |
Typical Turn On Delay Time | 13 ns | 16 ns | 18 ns |
Part # Aliases | IAUS165N08S5N029 | IAUS200N08S5N023 SP001792362 | IAUS240N08S5N019 SP001792360 |
Tradename | - | OptiMOS | OptiMOS |