IAUS

IAUS165N08S5N029ATMA1 vs IAUS200N08S5N023ATMA1 vs IAUS240N08S5N019ATMA1

 
PartNumberIAUS165N08S5N029ATMA1IAUS200N08S5N023ATMA1IAUS240N08S5N019ATMA1
DescriptionMOSFETMOSFET OptiMOS -5 Power-TransistorMOSFET OptiMOS -5 Power-Transistor
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseHSOG-8HSOG-8HSOG-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V80 V
Id Continuous Drain Current165 A200 A240 A
Rds On Drain Source Resistance4.4 mOhms3.7 mOhms3 mOhms
Vgs th Gate Source Threshold Voltage2.2 V2.2 V2.2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge90 nC110 nC130 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation167 W200 W230 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReel--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time29 ns32 ns36 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time9 ns11 ns12 ns
Factory Pack Quantity180018001800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time23 ns30 ns35 ns
Typical Turn On Delay Time13 ns16 ns18 ns
Part # AliasesIAUS165N08S5N029IAUS200N08S5N023 SP001792362IAUS240N08S5N019 SP001792360
Tradename-OptiMOSOptiMOS
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IAUS300N08S5N012ATMA1 MOSFET
IAUS165N08S5N029ATMA1 MOSFET
IAUS200N08S5N023ATMA1 MOSFET OptiMOS -5 Power-Transistor
IAUS240N08S5N019ATMA1 MOSFET OptiMOS -5 Power-Transistor
IAUS300N08S5N014ATMA1 MOSFET OptiMOS -5 Power-Transistor
IAUS165N08S5N029ATMA1 MOSFET N-CH 80V 660A PG-HSOG-8-1
IAUS300N08S5N012ATMA1 MOSFET N-CH 80V 300A PG-HSOG-8-1
IAUS200N08S5N023ATMA1 MOSFET N-CH 80V 200A PG-HSOG-8-1
IAUS240N08S5N019ATMA1 MOSFET N-CH 80V 240A PG-HSOG-8-1
IAUS300N08S5N014ATMA1 MOSFET N-CH 80V 300A PG-HSOG-8-1
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