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ISL9R8120P2

ISL9R8120P2
Mfr. #:
ISL9R8120P2
Manufacturer:
ON Semiconductor / Fairchild
Description:
Diodes - General Purpose, Power, Switching 8A 1200V STEALTH
Lifecycle:
New from this manufacturer.
Datasheet:
ISL9R8120P2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
Diodes - General Purpose, Power, Switching
RoHS:
Y
Mounting Style:
Through Hole
Package / Case:
TO-220-2
Peak Reverse Voltage:
1200 V
Max Surge Current:
100 A
If - Forward Current:
8 A
Configuration:
Single
Recovery Time:
44 ns
Vf - Forward Voltage:
3.3 V
Ir - Reverse Current:
100 uA
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
ISL9R8120P2
Packaging:
Tube
Height:
9.65 mm
Length:
10.67 mm
Type:
Switching Diode
Width:
4.83 mm
Brand:
ON Semiconductor / Fairchild
Product Type:
Diodes - General Purpose, Power, Switching
Factory Pack Quantity:
400
Subcategory:
Diodes & Rectifiers
Vr - Reverse Voltage:
1200 V
Part # Aliases:
ISL9R8120P2_NL
Unit Weight:
0.076192 oz
Tags
ISL9R81, ISL9R8, ISL9R, ISL9, ISL
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Diode Switching 1.2KV 8A 2-Pin(2+Tab) TO-220AC Rail
***ark
Diode; Repetitive Reverse Voltage Max, Vrrm:1200V; Forward Current, If(AV):8A; Forward Voltage Max, VF:3.3V; Operating Temperature Range:-55°C to +150°C; Package/Case:TO-220AC; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***rchild Semiconductor
The ISL9R8120P2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Part # Mfg. Description Stock Price
ISL9R8120P2
DISTI # ISL9R8120P2-ND		ON SemiconductorDIODE GEN PURP 1.2KV 8A TO220-2L
RoHS: Compliant
Min Qty: 400
Container: Tube		Limited Supply - Call
    ISL9R8120P2
    DISTI # 29H0500    		ON SemiconductorFAST DIODE, 8A, 1.2KV, TO-220AC,Repetitive Reverse Voltage Vrrm Max:1.2kV,Forward Current If(AV):8A,Diode Configuration:Single,Forward Voltage VF Max:3.3V,Reverse Recovery Time trr Max:44ns,Forward Surge Current Ifsm Max:100A RoHS Compliant: Yes0
      ISL9R8120P2
      DISTI # 512-ISL9R8120P2      		ON SemiconductorDiodes - General Purpose, Power, Switching 8A 1200V STEALTH
      RoHS: Compliant      		0
        ISL9R8120P2...
        DISTI # 1495108        		ON SemiconductorDIODE, FAST, 8A, 1200V, TO-220
        RoHS: Compliant        		0
        • 1000:$0.9980
        • 500:$1.0600
        • 250:$1.2700
        • 100:$1.5100
        • 25:$2.0900
        • 1:$2.4900
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        Availability
        Stock:
        Available
        On Order:
        3000
        Enter Quantity:
        Current price of ISL9R8120P2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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