QPD0060

QPD0060
Mfr. #:
QPD0060
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-3.6GHz GaN 90W 48V
Lifecycle:
New from this manufacturer.
Datasheet:
QPD0060 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
QPD0060 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Technology:
GaN
Gain:
16.2 dB
Vds - Drain-Source Breakdown Voltage:
-
Vgs - Gate-Source Breakdown Voltage:
-
Id - Continuous Drain Current:
-
Output Power:
90 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
-
Pd - Power Dissipation:
-
Mounting Style:
SMD/SMT
Package / Case:
DFN-6
Packaging:
Reel
Application:
Microcell Base Station, W-CDMA / LTE
Configuration:
Single
Operating Frequency:
1.8 GHz to 3.8 GHz
Series:
QPD
Brand:
Qorvo
Forward Transconductance - Min:
-
Development Kit:
QPD0060PCB4B01
Product Type:
RF JFET Transistors
Factory Pack Quantity:
250
Subcategory:
Transistors
Part # Aliases:
1131037
Tags
QPD006, QPD0, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
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Availability
Stock:
Available
On Order:
4500
Enter Quantity:
Current price of QPD0060 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$54.09
$54.09
25
$48.68
$1 217.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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