PartNumber | QPD0060SR | QPD0060TR7 | QPD0060 |
Description | RF Amplifier 100W GaN25HV | RF Amplifier 100W GaN25HV | RF JFET Transistors DC-3.6GHz GaN 90W 48V |
Manufacturer | Qorvo | Qorvo | Qorvo |
Product Category | RF Amplifier | RF Amplifier | RF JFET Transistors |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | DFN-6 | DFN-6 | DFN-6 |
Type | Power Amplifier | Power Amplifier | - |
Technology | GaN | GaN | GaN |
Operating Frequency | DC to 2.7 GHz | DC to 2.7 GHz | 1.8 GHz to 3.8 GHz |
Gain | 25 dB | 25 dB | 16.2 dB |
Operating Supply Voltage | 48 V | 48 V | - |
Packaging | Reel | Reel | Reel |
Brand | Qorvo | Qorvo | Qorvo |
Moisture Sensitive | Yes | Yes | - |
Product Type | RF Amplifier | RF Amplifier | RF JFET Transistors |
Factory Pack Quantity | 100 | 500 | 250 |
Subcategory | Wireless & RF Integrated Circuits | Wireless & RF Integrated Circuits | Transistors |
Vds Drain Source Breakdown Voltage | - | - | - |
Vgs Gate Source Breakdown Voltage | - | - | - |
Id Continuous Drain Current | - | - | - |
Output Power | - | - | 90 W |
Maximum Drain Gate Voltage | - | - | - |
Minimum Operating Temperature | - | - | - 40 C |
Maximum Operating Temperature | - | - | - |
Pd Power Dissipation | - | - | - |
Application | - | - | Microcell Base Station, W-CDMA / LTE |
Configuration | - | - | Single |
Series | - | - | QPD |
Forward Transconductance Min | - | - | - |
Development Kit | - | - | QPD0060PCB4B01 |
Part # Aliases | - | - | 1131037 |