A2T21H141W24SR3

A2T21H141W24SR3
Mfr. #:
A2T21H141W24SR3
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 36 W Avg., 28 V
Lifecycle:
New from this manufacturer.
Datasheet:
A2T21H141W24SR3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
A2T21H141W24SR3 more Information A2T21H141W24SR3 Product Details
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
Transistor Polarity:
Dual N-Channel
Technology:
Si
Id - Continuous Drain Current:
1 A
Vds - Drain-Source Breakdown Voltage:
- 500 mV, 65 V
Gain:
17.2 dB
Output Power:
36 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
NI-780S-4
Packaging:
Reel
Operating Frequency:
2110 MHz to 2200 MHz
Type:
RF Power MOSFET
Brand:
NXP Semiconductors
Number of Channels:
2 Channel
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage:
0.8 V
Part # Aliases:
935368003128
Tags
A2T21H1, A2T21H, A2T21, A2T2, A2T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Image Part # Description
A2T21H100-25SR3

Mfr.#: A2T21H100-25SR3

OMO.#: OMO-A2T21H100-25SR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 18 W Avg., 28 V
A2T21H140-24SR3

Mfr.#: A2T21H140-24SR3

OMO.#: OMO-A2T21H140-24SR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 36 W Avg., 28 V
A2T21H141W24SR3

Mfr.#: A2T21H141W24SR3

OMO.#: OMO-A2T21H141W24SR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 36 W Avg., 28 V
A2T21H100-25SR3

Mfr.#: A2T21H100-25SR3

OMO.#: OMO-A2T21H100-25SR3-NXP-SEMICONDUCTORS

IC RF LDMOS TRANS CELL
A2T21H140-24SR3

Mfr.#: A2T21H140-24SR3

OMO.#: OMO-A2T21H140-24SR3-NXP-SEMICONDUCTORS

RF MOSFET LDMOS DUAL 28V OM780-4
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of A2T21H141W24SR3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Start with
Top