PartNumber | A2T21H100-25SR3 | A2T21H140-24SR3 | A2T21H141W24SR3 |
Description | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 18 W Avg., 28 V | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 36 W Avg., 28 V | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 36 W Avg., 28 V |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Packaging | Reel | Reel | Reel |
Brand | NXP / Freescale | NXP Semiconductors | NXP Semiconductors |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 250 | 250 | 250 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | 935320549128 | 935340104128 | 935368003128 |
Unit Weight | 0.164793 oz | 0.164793 oz | - |
Transistor Polarity | - | Dual N-Channel | Dual N-Channel |
Id Continuous Drain Current | - | 1 A | 1 A |
Vds Drain Source Breakdown Voltage | - | - 500 mV, 65 V | - 500 mV, 65 V |
Gain | - | 17.4 dB | 17.2 dB |
Output Power | - | 36 W | 36 W |
Minimum Operating Temperature | - | - 40 C | - 40 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | NI-780S-4 | NI-780S-4 |
Operating Frequency | - | 2110 MHz to 2170 MHz | 2110 MHz to 2200 MHz |
Type | - | RF Power MOSFET | RF Power MOSFET |
Number of Channels | - | 2 Channel | 2 Channel |
Vgs Gate Source Voltage | - | - 6 V, 10 V | - 6 V, 10 V |
Vgs th Gate Source Threshold Voltage | - | 0.8 V | 0.8 V |