NDBA180N10BT4H

Mfr. #:: NDBA180N10BT4H
Manufacturer:: ON Semiconductor
Description:: MOSFET NCH 180A 100V TO-263
Lifecycle:: New from this manufacturer.
Datasheet:: NDBA180N10BT4H Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 180 A

Rds On - Drain-Source Resistance:: 2.3 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 95 nC

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 200 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Transistor Type:: 1 N-Channel

Brand:: ON Semiconductor

Forward Transconductance - Min:: 150 S

Fall Time:: 130 ns

Product Type:: MOSFET

Rise Time:: 320 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 185 ns

Typical Turn-On Delay Time:: 95 ns

Unit Weight:: 0.077603 oz

Tags: NDBA1, NDBA, NDB

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Vacuum Packaging with PL

Step2:
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Step3:
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NDBA180N10BT4H Description

***ical: Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R

***emi: Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel

***r Electronics: Power Field-Effect Transistor, 100A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***(Formerly Allied Electronics): IRFS7730PBF N-channel MOSFET Transistor; 246 A; 75 V; 3-Pin D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH Si 75V 246A 3-Pin(2+Tab) D2PAK Tube

***nell: MOSFET, N-CH, 75V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 246A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7

***ineon: Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

***icroelectronics: Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET

***ical: Trans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R

***nell: MOSFET, N CH, 100V, 180A, H2PAK-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V

***(Formerly Allied Electronics): IRFS7734PBF N-channel MOSFET Transistor; 183 A; 75 V; 3-Pin D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***roFlash: Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET¬Æ Power Mosfet - D2PAK

***Yang: Trans MOSFET N-CH 75V 183A 3-Pin D2PAK T/R - Tape and Reel

***ark: TUBE / MOSFET, 75V, 183A, 3.5 Ohm, 180 nC, D2PAK

***nell: MOSFET, N-CH, 75V, 183A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 183A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 290 W

*** Stop Electro: Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

***icroelectronics: N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package

***et: Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R

***ponent Stockers USA: 180 A 100 V 0.004 ohm N-CHANNEL Si POWER MOSFET

***ark: MOSFET, N CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 180A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ow.cn: STH180N10F3-2 STMicroelectronics Transistors MOSFETs N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R - Arrow.com

***icroelectronics SCT: Power MOSFETs, 100V, 180A, H2PAK-2, Tape and Reel

***ineon SCT: Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH 100V 130A Automotive 3-Pin(2+Tab) D2PAK Tube

***(Formerly Allied Electronics): MOSFET N-Channel 100V 130A HEXFET D2PAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET,N CH,100V,75A,D2PAK; Continuous Drain Current Id:130A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Automotive 48V Energy Mgmt; Automotive 48V DC-DC; Automotive 48V Motor Drive; Brushed Motor Drive; Brushless Motor Drive; Exhaust; HV DC-DC Converter

***icroelectronics: N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package

***ure Electronics: N-Channel 100 V 2.5 mOhm 300 W STripFET F7 Power Mosfet-H2PAK-2

***p One Stop: Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R

***r Electronics: Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***icroelectronics SCT: Power MOSFETs, 100V, 180A, H2PAK-2, Tape and Reel

***el Electronic: Buffers & Line Drivers OCTAL BUFFER 3-STATE

Market price

Part #	Mfg.	Description	Stock	Price
NDBA180N10BT4H DISTI # NDBA180N10BT4H-ND	ON Semiconductor	MOSFET N-CH 100V 180A DPAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Limited Supply - Call
NDBA180N10BT4H	ON Semiconductor	RoHS: Not Compliant	22990	1000:$1.9200 500:$2.0200 100:$2.1100 25:$2.2000 1:$2.3600
NDBA180N10BT4H DISTI # 863-NDBA180N10BT4H	ON Semiconductor	MOSFET NCH 180A 100V TO-263 RoHS: Compliant	0
NDBA180N10BT4H	ON Semiconductor		529
NDBA180N10BT4H	ON Semiconductor	100V,2.8m,180A,N-Channel Power MOSFET	500	1:$3.1300 100:$2.3500 500:$2.0100 1000:$1.8800

NDBA180N10BT4H

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes