 |  |  | |
| PartNumber | NDBA170N06AT4H | NDBA180N10BT4H | NDBA100N10BT4H |
| Description | MOSFET NCH 170A 60V TO263 | MOSFET NCH 180A 100V TO-263 | MOSFET N-CH 100V 100A DPAK |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | TO-263-3 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 180 A | - |
| Rds On Drain Source Resistance | - | 2.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 95 nC | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 200 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Packaging | - | Reel | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 150 S | - |
| Fall Time | - | 130 ns | - |
| Rise Time | - | 320 ns | - |
| Typical Turn Off Delay Time | - | 185 ns | - |
| Typical Turn On Delay Time | - | 95 ns | - |
| Unit Weight | - | 0.077603 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor |
NDBA170N06AT4H | MOSFET NCH 170A 60V TO263 | |
| NDBA180N10BT4H | MOSFET NCH 180A 100V TO-263 | ||
| NDBA100N10BT4H | MOSFET N-CH 100V 100A DPAK | ||
| NDBA170N06AT4H | MOSFET N-CH 60V 170A DPAK | ||
| NDBA180N10BT4H | MOSFET N-CH 100V 180A DPAK | ||
| NDBA070N10BT4H | New and Original | ||
| NDBA100N10B | New and Original | ||
| NDBA170N06A | New and Original | ||
| NDBA180N10B | New and Original |