IRF6775MTR1PBF

Mfr. #:: IRF6775MTR1PBF
Manufacturer:: Infineon / IR
Description:: MOSFET 150V N-CH 8A 47mOhm for Digital Audio
Lifecycle:: New from this manufacturer.
Datasheet:: IRF6775MTR1PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF6775MTR1PBF Datasheet IRF6775MTR1PBF Datasheet (P4-P6)IRF6775MTR1PBF Datasheet (P7-P9)IRF6775MTR1PBF Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DirectFET-MZ

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 150 V

Id - Continuous Drain Current:: 28 A

Rds On - Drain-Source Resistance:: 47 mOhms

Vgs th - Gate-Source Threshold Voltage:: 5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 25 nC

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 89 W

Configuration:: Single

Packaging:: Reel

Height:: 0.7 mm

Length:: 6.35 mm

Transistor Type:: 1 N-Channel

Width:: 5.05 mm

Brand:: Infineon / IR

Forward Transconductance - Min:: 11 S

Fall Time:: 15 ns

Moisture Sensitive:: Yes

Product Type:: MOSFET

Rise Time:: 7.8 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001551188

Unit Weight:: 0.017637 oz

Tags: IRF67, IRF6, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6775MTR1PBF Description

***(Formerly Allied Electronics): MOSFET, N-Ch, VDSS 150V, RDS(ON) 47 mOhm, ID 28A, DirectFET

***ment14 APAC: MOSFET, N, DIRECTFET MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:150V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.9A; Package / Case:MZ; Power Dissipation Pd:89W; Pulse Current Idm:39A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:3V

***ernational Rectifier: A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 28 amperes optimized with low on resistance for applications such as Class D Audio Amplifier. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa

***(Formerly Allied Electronics): IRFR4615PBF N-channel MOSFET Transistor; 33 A; 150 V; 3-Pin DPAK

***ure Electronics: Single N-Channel 150 V 42 mOhm 26 nC HEXFET® Power Mosfet - DPAK

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED

*** Source Electronics: Trans MOSFET N-CH 150V 33A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 150V 33A DPAK

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH 150V 33A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dis

***ineon SCT: Digital Audio 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 150V 42 mOhm 40 nC HEXFET® Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH Si 150V 33A 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 150V, 33A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0345ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; P

***emi: N-Channel Power Trench® MOSFET, 150V, 29A, 54mΩ

***ure Electronics: N-Channel 150 V 54 mOhm Surface Mount PowerTrench Mosfet TO-252AA

***r Electronics: Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N, SMD, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:29A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ

***ure Electronics: N-Channel 150 V 66 mOhm Surface Mount PowerTrench Mosfet - TO-252AA

***nell: MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

***r Electronics: Power Field-Effect Transistor, 3.7A I(D), 150V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***(Formerly Allied Electronics): SUD25N15-52-E3 N-channel MOSFET Transistor; 25 A; 150 V; 3-Pin TO-252

***ure Electronics: Single N-Channel 150 V 0.052 Ohms Surface Mount Power Mosfet - TO-252

*** Source Electronics: MOSFET N-CH 150V 25A TO252 / Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) DPAK

***ment14 APAC: MOSFET, N CH, 150V, 25A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:150V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:100W; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:25A; Package / Case:TO-252; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Market price

Part #	Mfg.	Description	Stock	Price
IRF6775MTR1PBF DISTI # IRF6775MTR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 150V 4.9A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6775MTR1PBF DISTI # IRF6775MTR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 150V 4.9A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6775MTR1PBF DISTI # IRF6775MTR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 4.9A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6775MTR1PBF DISTI # 70018868	Infineon Technologies AG	MOSFET,N-Ch,VDSS 150V,RDS(ON) 47 mOhm,ID 28A,DirectFET RoHS: Compliant	0	1000:$1.8000 2000:$1.6300
IRF6775MTR1PBF DISTI # 942-IRF6775MTR1PBF	Infineon Technologies AG	MOSFET 150V N-CH 8A 47mOhm for Digital Audio RoHS: Compliant	0
IRF6775MTR1PBF	International Rectifier	RoHS: Compliant	Europe - 1000
IRF6775MTR1PBF DISTI # 1602267	Infineon Technologies AG	MOSFET, N, DIRECTFET MZ RoHS: Compliant	0	1:$4.6100 10:$3.7900 100:$3.0700 500:$2.7400 1000:$2.4300 2000:$2.2600 5000:$2.1900 10000:$2.0500

Image	Part #	Description
	Mfr.#: IRF6775MTRPBF OMO.#: OMO-IRF6775MTRPBF	MOSFET 150V 1 x N-CH HEXFET for Digital Audio
	Mfr.#: IRF6775MTR1PBF OMO.#: OMO-IRF6775MTR1PBF	MOSFET 150V N-CH 8A 47mOhm for Digital Audio
	Mfr.#: IRF6775MTR1PBF OMO.#: OMO-IRF6775MTR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 4.9A DIRECTFET
	Mfr.#: IRF6775MTRPBF OMO.#: OMO-IRF6775MTRPBF-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET 150V 1 x N-CH HEXFET for Digital Audio

IRF6775MTR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes