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IRF6775MTR1PBF

P1-P3P4-P6P7-P9P10-P10
Notes through are on page 2
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6775MPbF device utilizes DirectFET
TM
packaging technology. DirectFET
TM
packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET
TM
package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFET
TM
package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low R
DS(on)
for improved efficiency
• Low Q
g
for better THD and improved efficiency
• Low Q
rr
for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower EMI
• Can deliver up to 250W per channel into 4Ω Load in
Half-Bridge Configuration Amplifier
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
DirectFET ISOMETRIC
MZ
SQ SX ST SH MQ MX MT MN
MZ
V
DS
150 V
R
DS(on)
typ. @ V
GS
= 10V 47
m
Q
g
typ.
25.0 nC
R
G(int)
max.
3.0
Key Parameters
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Linear Derating Factor
W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient
––– 45 °C/W
R
θJA
Junction-to-Ambient
12.5 –––
R
θJA
Junction-to-Ambient
20 –––
R
θJC
Junction-to-Case
––– 1.4
R
θJ-PCB
Junction-to-PCB Mounted
1.4 –––
89
Max.
4.9
3.9
39
150
± 20
28
-40 to + 150
0.022
2.8
1.8
33
5.6
IRF6775MTRPbF
DIGITAL AUDIO MOSFET
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014
IRF6775MTRPbF
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.53mH, R
G
= 25Ω, I
AS
= 11.2A.
Surface mounted on 1 in. square Cu board.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
T
C
measured with thermal couple mounted to top
(Drain) of part.
R
θ
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 47 56
m
Ω
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G(int)
Internal Gate Resistance ––– ––– 3.0 Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
gfs Forward Transconductance 11 ––– ––– S
Q
g
Total Gate Charge ––– 25 36
V
DS
= 75V
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 5.8 –––
V
GS
= 10V
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.4 –––
I
D
= 5.6A
Q
gd
Gate-to-Drain Charge ––– 6.6 ––– nC See Fig. 6 and 17
Q
godr
Gate Charge Overdrive ––– 11 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 8.0 –––
t
d(on)
Turn-On Delay Time ––– 5.9 –––
t
r
Rise Time ––– 7.8 –––
t
d(off)
Turn-Off Delay Time ––– 5.8 ––– ns
t
f
Fall Time –––15–––
C
iss
Input Capacitance ––– 1411 –––
C
oss
Output Capacitance ––– 193 –––
C
rss
Reverse Transfer Capacitance ––– 40 ––– pF
C
oss
Output Capacitance ––– 1557 –––
C
oss
Output Capacitance ––– 93 –––
C
oss
eff.
Effective Output Capacitance ––– 175 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 28
(Body Diode) A
I
Pulsed Source Current ––– ––– 39
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 62 ––– ns
Q
rr
Reverse Recovery Charge ––– 164 ––– nC
V
DD
= 75V
I
D
= 5.6A
R
G
= 6.0Ω
V
GS
= 20V
V
GS
= -20V
Conditions
V
DS
= 50V, I
D
= 5.6A
T
J
= 25°C, I
S
= 5.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.6A, V
DD
= 25V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.6A
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 150V, V
GS
= 0V
V
DS
= 120V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 120V
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
IRF6775MTRPbF
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0 10203040
Q
G
Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 120V
VDS= 75V
VDS= 30V
I
D
= 5.6A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60μs PULSE WIDTH
Tj = 25°C
5.5V
VGS
TOP 15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60μs PULSE WIDTH
Tj = 150°C
5.5V
VGS
TOP 15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
3.0 4.0 5.0 6.0 7.0 8.0
V
GS
, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 25V
≤
60μs PULSE WIDTH
T
J
= 150°C
T
J
= 25°C
T
J
= -40°C
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 5.6A
V
GS
= 10V
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
P1-P3P4-P6P7-P9P10-P10

IRF6775MTR1PBF

Mfr. #:
Buy IRF6775MTR1PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 150V N-CH 8A 47mOhm for Digital Audio
Lifecycle:
New from this manufacturer.
Delivery:
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