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SIS892ADN-T1-GE3

SIS892ADN-T1-GE3
Mfr. #:
SIS892ADN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Lifecycle:
New from this manufacturer.
Datasheet:
SIS892ADN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIS892ADN-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-1212-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
28 A
Rds On - Drain-Source Resistance:
27 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
19.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
52 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Height:
1.04 mm
Length:
3.3 mm
Series:
SIS
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
19 S
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
13 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
16 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
SIS892ADN-GE3
Tags
SIS892, SIS89, SIS8, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 100V, 28A, POWERPAK 1212-8; Transistor Polarity:N Channel; Continu
***ure Electronics
MOSFET 100V 33MOHM@10V 28A N-CH MV T-FET
***ronik
N-CH 100V 28A 33mOhm PPAK1212-8
***nell
MOSFET, N-CH, 100V, PPAK-1212; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Part # Mfg. Description Stock Price
SIS892ADN-T1-GE3
DISTI # V36:1790_07435337		Vishay IntertechnologiesTrans MOSFET N-CH 100V 7.4A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
  • 3000:$0.4227
SIS892ADN-T1-GE3
DISTI # V72:2272_07435337		Vishay IntertechnologiesTrans MOSFET N-CH 100V 7.4A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
    SIS892ADN-T1-GE3
    DISTI # SIS892ADN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 100V 28A PPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		9779In Stock
    • 1000:$0.5029
    • 500:$0.6370
    • 100:$0.7711
    • 10:$0.9890
    • 1:$1.1100
    SIS892ADN-T1-GE3
    DISTI # SIS892ADN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 100V 28A PPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		9779In Stock
    • 1000:$0.5029
    • 500:$0.6370
    • 100:$0.7711
    • 10:$0.9890
    • 1:$1.1100
    SIS892ADN-T1-GE3
    DISTI # SIS892ADN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 100V 28A PPAK 1212
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		9000In Stock
    • 15000:$0.4166
    • 6000:$0.4329
    • 3000:$0.4557
    SIS892ADN-T1-GE3
    DISTI # SIS892ADN-T1-GE3    		Vishay IntertechnologiesTransistor MOSFET N-CH 100V 28A 8-Pin PowerPAK 1212 (Alt: SIS892ADN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000    		Europe - 0
    • 30000:€0.3759
    • 18000:€0.4039
    • 12000:€0.4369
    • 6000:€0.5079
    • 3000:€0.7449
    SIS892ADN-T1-GE3
    DISTI # SIS892ADN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 7.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS892ADN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.3969
    • 18000:$0.4079
    • 12000:$0.4199
    • 6000:$0.4369
    • 3000:$0.4509
    SIS892ADN-T1-GE3
    DISTI # 63W4139    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V RoHS Compliant: Yes13714
    • 500:$0.5960
    • 250:$0.6440
    • 100:$0.6930
    • 50:$0.7630
    • 25:$0.8320
    • 10:$0.9020
    • 1:$1.0900
    SIS892ADN-T1-GE3
    DISTI # 99W9583    		Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 28A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:28A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
    • 10000:$0.3940
    • 6000:$0.4030
    • 4000:$0.4190
    • 2000:$0.4650
    • 1000:$0.5120
    • 1:$0.5340
    SIS892ADN-T1-GE3
    DISTI # 78-SIS892ADN-T1-GE3    		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		4502
    • 1:$1.0800
    • 10:$0.8920
    • 100:$0.6850
    • 500:$0.5890
    • 1000:$0.4640
    • 3000:$0.4330
    • 6000:$0.4120
    • 9000:$0.3960
    SIS892ADN-T1-GE3
    DISTI # TMOSP10986    		Vishay IntertechnologiesN-CH 100V 28A 33mOhm PPAK1212-8
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$0.4025
    SIS892ADN-T1-GE3
    DISTI # 2283695    		Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-121213644
    • 500:£0.4050
    • 250:£0.4380
    • 100:£0.4710
    • 25:£0.6130
    • 5:£0.7600
    SIS892ADN-T1-GE3
    DISTI # 2283695    		Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-1212
    RoHS: Compliant    		13795
    • 3000:$0.8720
    • 500:$0.8890
    • 100:$1.0300
    • 10:$1.3500
    • 1:$1.6300
    SIS892ADN-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8Americas - 9000
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      Availability
      Stock:
      Available
      On Order:
      1987
      Enter Quantity:
      Current price of SIS892ADN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.08
      $1.08
      10
      $0.89
      $8.92
      100
      $0.68
      $68.50
      500
      $0.59
      $294.50
      1000
      $0.46
      $464.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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