SIS89

SIS890DN-T1-GE3 vs SIS890DN vs SIS892ADN

 
PartNumberSIS890DN-T1-GE3SIS890DNSIS892ADN
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK 1212-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance19.5 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge29 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation52 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.04 mm--
Length3.3 mm--
SeriesSIS--
Transistor Type1 N-Channel--
Width3.3 mm--
BrandVishay / Siliconix--
Forward Transconductance Min25 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSIS890DN-GE3--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIS890DN-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
SIS892ADN-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
SIS892DN-T1-GE3 MOSFET 100V 30A 43W 29 mohms @ 10V
SIS890DN New and Original
SIS892ADN New and Original
SIS892DN-T1-GE3/S892 New and Original
SIS894DN New and Original
SIS894DN-T1-E3 New and Original
SIS894DN-T1-GE3 New and Original
Vishay
Vishay
SIS892ADN-T1-GE3 MOSFET N-CH 100V 28A PPAK 1212
SIS892DN-T1-GE3 MOSFET N-CH 100V 30A 1212-8 PPAK
SIS890DN-T1-GE3 Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
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