SIS892DN-T1-GE3

Mfr. #:: SIS892DN-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 100V 30A 43W 29 mohms @ 10V
Lifecycle:: New from this manufacturer.
Datasheet:: SIS892DN-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SIS892DN-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-1212-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 30 A

Rds On - Drain-Source Resistance:: 29 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 14.2 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 52 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET, PowerPAK

Packaging:: Reel

Series:: SIS

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 22 S

Fall Time:: 9 ns

Product Type:: MOSFET

Rise Time:: 11 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 21 ns

Typical Turn-On Delay Time:: 8 ns

Part # Aliases:: SIS892DN-GE3

Tags: SIS892, SIS89, SIS8, SIS

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS892DN-T1-GE3 Description

***ical: Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212-8 T/R

***et Europe: Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET N-CH 100V 30A 1212-8 PPAK

***ied Electronics & Automation: 100V 30A 43W 29 mohms @ 10V

***: N-CHANNEL 100-V (D-S)

***ark: MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C;;RoHS Compliant: Yes

***nell: MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:0.024ohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; Current Id Max:8A; Power Dissipation:3.7W

***ment14 APAC: MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Power Dissipation Pd:3.7W; Voltage Vgs Max:20V

SIS892DN-T1-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

Part #	Mfg.	Description	Stock	Price
SIS892DN-T1-GE3 DISTI # V36:1790_09216113	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0	3000000:$0.6272 1500000:$0.6274 300000:$0.6440 30000:$0.6717 3000:$0.6762
SIS892DN-T1-GE3 DISTI # V72:2272_09216113	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2531In Stock	1000:$0.7462 500:$0.9452 100:$1.1442 10:$1.4680 1:$1.6400
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2531In Stock	1000:$0.7462 500:$0.9452 100:$1.1442 10:$1.4680 1:$1.6400
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 PPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.6182 6000:$0.6424 3000:$0.6762
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R (Alt: SIS892DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS892DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.5889 18000:$0.6059 12000:$0.6229 6000:$0.6489 3000:$0.6689
SIS892DN-T1-GE3 DISTI # 86R3819	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.7770 3000:$0.7770
SIS892DN-T1-GE3 DISTI # 94T2851	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes	0	1000:$0.8370 500:$1.0400 250:$1.1900 100:$1.3300 50:$1.5000 25:$1.6800 1:$1.8900
SIS892DN-T1-GE3 DISTI # 70459593	Vishay Siliconix	100V 30A 43W 29 mohms @ 10V RoHS: Compliant	0	3000:$0.9840
SIS892DN-T1-GE3 DISTI # 78-SIS892DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V 30A 43W 29 mohms @ 10V RoHS: Compliant	8091	1:$1.6000 10:$1.3200 100:$1.0100 500:$0.8740 1000:$0.6890 3000:$0.6430 6000:$0.6110 9000:$0.5880
SIS892DN-T1-GE3.	Vishay Intertechnologies	MOSFET 100V 30A 43W 29 mohms @ 10V RoHS: Compliant	Americas -	10:$1.4940 250:$1.0580
SIS892DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V 30A 43W 29 mohms @ 10V RoHS: Compliant	Americas -
SIS892DN-T1-GE3 DISTI # 1859009	Vishay Intertechnologies	MOSFET,N CH,DIODE,100V,30A,PPAK12128 RoHS: Compliant	0	1000:$1.1300 500:$1.4300 100:$1.7300 10:$2.2200 1:$2.4700
SIS892DN-T1-GE3 DISTI # 2083727	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1 RoHS: Compliant	0	6000:$0.9710 3000:$1.0200

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Availability

Stock:: Available
On Order:: 1991
Enter Quantity:

Current price of SIS892DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.60~~; ~~$1.60~~

10: ~~$1.32~~; ~~$13.20~~

100: ~~$1.01~~; ~~$101.00~~

500: ~~$0.87~~; ~~$437.00~~

1000: ~~$0.69~~; ~~$689.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SIS892DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes