SIS890DN-T1-GE3

Name: Vishay - SIS890DN-T1-GE3
Brand: Vishay
SKU: OMO-4553319
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIS890DN-T1-GE3
Manufacturer:: Vishay
Description:: Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
Lifecycle:: New from this manufacturer.
Datasheet:: SIS890DN-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SIS890DN-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Single

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SIS890DN-GE3

Mounting-Style: SMD/SMT

Tradename: ThunderFET TrenchFET

Package-Case: PowerPAKR 1212-8

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: PowerPAKR 1212-8

Configuration: Dual

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 52W

Transistor-Type: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

Input-Capacitance-Ciss-Vds: 802pF @ 50V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 30A (Tc)

Rds-On-Max-Id-Vgs: 23.5 mOhm @ 10A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 29nC @ 10V

Pd-Power-Dissipation: 52 W

Vgs-Gate-Source-Voltage: 3 V

Id-Continuous-Drain-Current: 30 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 23.5 mOhms

Transistor-Polarity: N-Channel

Qg-Gate-Charge: 9.5 nC

Channel-Mode: Enhancement

Tags: SIS89, SIS8, SIS

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS890DN-T1-GE3 Description

***ure Electronics: N-Channel 100 V 23.5 mOhm 52 W TrenchFET Power Mosfet - PowerPAK-1212-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes

***nell: MOSFET, N-CH, 100V, PPAK-1212; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0195ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

SIS890DN-T1-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

Part #	Mfg.	Description	Stock	Price
SIS890DN-T1-GE3 DISTI # V72:2272_07434473	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2450	1000:$0.6140 500:$0.6955 250:$0.7063 100:$0.7846 25:$0.9612 10:$0.9649 1:$1.1125
SIS890DN-T1-GE3 DISTI # SIS890DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	36In Stock	1000:$0.6883 500:$0.8718 100:$1.1242 10:$1.4220 1:$1.6100
SIS890DN-T1-GE3 DISTI # SIS890DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	36In Stock	1000:$0.6883 500:$0.8718 100:$1.1242 10:$1.4220 1:$1.6100
SIS890DN-T1-GE3 DISTI # SIS890DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.6237
SIS890DN-T1-GE3 DISTI # 31038280	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.6804
SIS890DN-T1-GE3 DISTI # 31016418	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2450	1000:$0.6140 500:$0.6955 250:$0.7063 100:$0.7846 25:$0.9612 13:$0.9649
SIS890DN-T1-GE3 DISTI # SIS890DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SIS890DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7249 6000:$0.7029 12000:$0.6749 18000:$0.6559 30000:$0.6379
SIS890DN-T1-GE3 DISTI # SIS890DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R (Alt: SIS890DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIS890DN-T1-GE3 DISTI # SIS890DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R (Alt: SIS890DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.9729 6000:€0.6979 12000:€0.5659 18000:€0.4999 30000:€0.4789
SIS890DN-T1-GE3 DISTI # 70AC6484	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Product that comes on tape, but is not reeled (Alt: 70AC6484) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.6100 25:$1.4200 50:$1.2700 100:$1.1200 250:$0.9980 500:$0.8710 1000:$0.6880
SIS890DN-T1-GE3 DISTI # 70AC6484	Vishay Intertechnologies		2885	1:$1.6100 25:$1.4200 50:$1.2700 100:$1.1200 250:$0.9980 500:$0.8710 1000:$0.6880
SIS890DN-T1-GE3. DISTI # 30AC0125	Vishay Intertechnologies	N-CHANNEL 100V POWERPAK 1212-8 THUNDERFET MOSFET 23.5MOHM@10V , ROHS COMPLIANT: YES	0	1:$0.6750 3000:$0.6750
SIS890DN-T1-GE3 DISTI # 78-SIS890DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	4625	1:$1.4200 10:$1.1700 100:$0.8960 500:$0.7700 1000:$0.6760 3000:$0.6750
SIS890DN-T1-GE3 DISTI # 2283693	Vishay Intertechnologies	MOSFET, N-CH, 100V, PPAK-1212 RoHS: Compliant	2001	1:$2.2500 10:$1.8500 100:$1.4200 500:$1.2200 1000:$1.0800 3000:$1.0800
SIS890DN-T1-GE3 DISTI # 2283693	Vishay Intertechnologies	MOSFET, N-CH, 100V, PPAK-1212 RoHS: Compliant	2371	5:£1.1100 25:£1.0000 100:£0.7680 250:£0.7150 500:£0.6610
SIS890DN-T1-GE3 DISTI # C1S803603778538	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2450	250:$0.7057 100:$0.7841 25:$0.9602 10:$0.9640
SIS890DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK 1212-8	Americas - 15000

SIS890DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes