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IRF7341GTRPBF

IRF7341GTRPBF
Mfr. #:
IRF7341GTRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET PLANAR_MOSFETS
Lifecycle:
New from this manufacturer.
Datasheet:
IRF7341GTRPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7341GTRPBF DatasheetIRF7341GTRPBF Datasheet (P4-P6)IRF7341GTRPBF Datasheet (P7-P9)
ECAD Model:
More Information:
IRF7341GTRPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
5.1 A
Rds On - Drain-Source Resistance:
65 mOhms, 65 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
29 nC, 29 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
2.4 W
Configuration:
Dual
Channel Mode:
Enhancement
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
2 N-Channel
Width:
3.9 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
10.4 S, 10.4 S
Fall Time:
12.5 ns, 12.5 ns
Product Type:
MOSFET
Rise Time:
7.7 ns, 7.7 ns
Factory Pack Quantity:
4000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
31 ns, 31 ns
Typical Turn-On Delay Time:
9.2 ns, 9.2 ns
Part # Aliases:
SP001563394
Unit Weight:
0.017870 oz
Tags
IRF7341, IRF734, IRF73, IRF7, IRF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 55V 5.1A 8-Pin SOIC T/R
***ark
MOSFET, DUAL N-CHANNEL, 55V, 5.1A, SO-8, Q101 qualified, TAPE & REEL
***ineon SCT
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Part # Mfg. Description Stock Price
IRF7341GTRPBF
DISTI # 24580469		Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 40000:$0.7564
  • 24000:$0.7583
  • 16000:$0.7602
  • 8000:$0.7621
  • 4000:$0.7641
IRF7341GTRPBF
DISTI # IRF7341GTRPBF-ND		Infineon Technologies AGMOSFET N-CH 55V 5.1A
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.9281
IRF7341GTRPBF
DISTI # C1S322000647873		Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.8420
IRF7341GTRPBF
DISTI # IRF7341GTRPBF		Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7341GTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 4000
  • 4000:$0.7959
  • 8000:$0.7939
  • 16000:$0.7919
  • 24000:$0.7899
  • 40000:$0.7879
IRF7341GTRPBF
DISTI # 49AC0327		Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.1A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes3850
  • 1:$1.8400
  • 10:$1.5700
  • 25:$1.4600
  • 50:$1.3600
  • 100:$1.2500
  • 250:$1.1800
  • 500:$1.1000
  • 1000:$0.9070
IRF7341GTRPBF
DISTI # 942-IRF7341GTRPBF		Infineon Technologies AGMOSFET PLANAR_MOSFETS
RoHS: Compliant		3336
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9070
  • 4000:$0.8130
IRF7341GTRPBF
DISTI # 2839483		Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8
RoHS: Compliant		3850
  • 5:$3.3200
  • 25:$2.8900
  • 100:$2.3600
  • 250:$1.9900
  • 500:$1.7200
  • 1000:$1.6300
  • 5000:$1.5400
IRF7341GTRPBF
DISTI # 2839483		Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8
RoHS: Compliant		3840
  • 1:£2.0100
  • 10:£1.5600
  • 100:£1.2000
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of IRF7341GTRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.84
$1.84
10
$1.57
$15.70
100
$1.25
$125.00
500
$1.10
$550.00
1000
$0.91
$907.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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