HEXFET
®
Power MOSFET
These HEXFET ® Power MOSFET’s in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of these
HEXFET Power MOSFET’s are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design
an extremely efficient and reliable device for use in a wide
variety of other applications.
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
• Advanced Process Technology
• Dual N-Channel MOSFET
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free
• Halogen-Free
Description
SO-8
V
DSS
R
DS(on)
max I
D
55V 0.050@V
GS
= 10V 5.1A
0.065@V
GS
= 4.5V 4.42A
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Absolute Maximum Ratings
Parameter Max. Units
V
DS
Drain-Source Voltage 55 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 5.1
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 4.2 A
I
DM
Pulsed Drain Current 42
P
D
@T
A
= 25°C Maximum Power Dissipation 2.4 W
P
D
@T
A
= 70°C Maximum Power Dissipation 1.7 W
Linear Derating Factor 16 mW/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 140 mJ
I
AR
Avalanche Current 5.1 A
E
AR
Repetitive Avalanche Energy See Fig. 14, 15, 16 mJ
T
J
, T
STG
Junction and Storage Temperature Range -55 to + 175 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 62.5 °C/W
IRF7341GPbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 20, 2014
Form Quantity
Tube/Bulk 95 IRF7341GPbF
Tape and Reel 4000 IRF7341GTRPbF
Package Type
Orderable Part Number
IRF7341GPbF SO-8
Base Part Number
