IRFU5410PBF

Mfr. #:: IRFU5410PBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT P-Ch -100V -13A 205mOhm 38.7nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFU5410PBF Datasheet
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HTML Datasheet:: IRFU5410PBF Datasheet IRFU5410PBF Datasheet (P4-P6)IRFU5410PBF Datasheet (P7-P9)IRFU5410PBF Datasheet (P10-P11)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-251-3

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 13 A

Rds On - Drain-Source Resistance:: 205 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 38.7 nC

Pd - Power Dissipation:: 66 W

Configuration:: Single

Packaging:: Tube

Height:: 6.22 mm

Length:: 6.73 mm

Transistor Type:: 1 P-Channel

Width:: 2.38 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SP001557796

Unit Weight:: 0.139332 oz

Tags: IRFU5410P, IRFU541, IRFU54, IRFU5, IRFU, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFU5410PBF Description

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W

***ineon SCT: -100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ure Electronics: Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes

***nell: MOSFET, P, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.205ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 66W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-251; Current Id Max: -13A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Length: 9.65mm; Lead Spacing: 2.28mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 52A; SMD Marking: IRFU5410PBF; Termination Type: Through Hole; Turn Off Time: 45ns; Turn On Time: 15ns; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V

***th Star Micro: NTD12N10: Power MOSFET 100V 12A 165 mOhm Single N-Channel IPAK

***et: Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) IPAK Rail

***ser: MOSFETs- Power and Small Signal 100V 12A N-Channel

***r Electronics: Power Field-Effect Transistor, 12A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:12A; Drain Source Voltage, Vds:100V; On Resistance, Rds(on):165mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3.1V; Power Dissipation, Pd:56.6W ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 100 V 115 mOhm 29.3 nC HEXFET® Power Mosfet - IPAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.115Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 16 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 115 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 6.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79

***ment14 APAC: MOSFET, N, 100V, 15A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):115mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:79W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:16A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.4°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:60A; SMD Marking:IRFU3910; Termination Type:Through Hole; Turn Off Time:25ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***i-Key: MOSFET N-CH 100V 16A TO-251AA

***ser: MOSFETs 16a, 100V N-Ch 0.090Ohm

***-Wing Technology: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W

***ure Electronics: Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***trelec: MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 48 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, 100V, 11A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:10A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; On State resistance @ Vgs = 10V:185mohm; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W

***ure Electronics: Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48

***ment14 APAC: MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK

***ark: MOSFET Transistor, N Channel, 10 A, 100 V, 0.142 ohm, 10 V, 2 V

***r Electronics: Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N CH, 100V, 10A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Market price

Part #	Mfg.	Description	Stock	Price
IRFU5410PBF DISTI # 20146843	Infineon Technologies AG	Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	2925	2500:$0.3261 1000:$0.3357 500:$0.3459 250:$0.3567 100:$0.3682 32:$0.3805
IRFU5410PBF DISTI # 30700634	Infineon Technologies AG	Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	2400	200:$0.4973 100:$0.5138 50:$0.5546 32:$0.7650
IRFU5410PBF DISTI # IRFU5410PBF-ND	Infineon Technologies AG	MOSFET P-CH 100V 13A I-PAK RoHS: Compliant Min Qty: 1 Container: Tube	1587In Stock	1050:$0.4158 525:$0.5267 150:$0.6791 75:$0.7761 1:$0.9700
IRFU5410PBF DISTI # C1S322000497047	Infineon Technologies AG	Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	2400	100:$0.4030 50:$0.4390 10:$0.6050 5:$0.6480
IRFU5410PBF DISTI # IRFU5410PBF	Infineon Technologies AG	Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU5410PBF) RoHS: Compliant Min Qty: 1350 Container: Tube	Americas - 0	1350:$0.2899 1500:$0.2799 2850:$0.2689 6750:$0.2599 13500:$0.2559
IRFU5410PBF DISTI # SP001557796	Infineon Technologies AG	Trans MOSFET P-CH 100V 13A 3-Pin(3+Tab) IPAK (Alt: SP001557796) RoHS: Compliant Min Qty: 1	Europe - 0	1:€0.5529 10:€0.5059 25:€0.5049 50:€0.5039 100:€0.4279 500:€0.3759 1000:€0.3189
IRFU5410PBF DISTI # 97K2076	Infineon Technologies AG	MOSFET Transistor, P Channel, 13 A, 100 V, 205 mohm, -10 V, -4 V RoHS Compliant: Yes	0
IRFU5410PBF DISTI # 70017544	Infineon Technologies AG	MOSFET,Power,P-Ch,VDSS -100V,RDS(ON) 0.205Ohm,ID -13A,I-Pak (TO-251AA),PD 66W RoHS: Compliant	0	1350:$0.7080
IRFU5410PBF DISTI # 942-IRFU5410PBF	Infineon Technologies AG	MOSFET MOSFT P-Ch -100V -13A 205mOhm 38.7nC RoHS: Compliant	4134	1:$0.8300 10:$0.7060 100:$0.5420 500:$0.4790 1000:$0.3780 2500:$0.3360 10000:$0.3230
IRFU5410PBF	International Rectifier	RoHS: Not Compliant	825	1000:$0.3300 500:$0.3500 100:$0.3600 25:$0.3800 1:$0.4100
IRFU5410PBF DISTI # 8274136P	Infineon Technologies AG	HEXFET P-CH MOSFET 13A 100V IPAK, TU	1245	50:£0.5460 100:£0.4740 350:£0.4130 750:£0.3510
IRFU5410PBF DISTI # 8274136	Infineon Technologies AG	HEXFET P-CH MOSFET 13A 100V IPAK, PK	40	10:£0.6170 50:£0.5460 100:£0.4740 350:£0.4130 750:£0.3510
IRFU5410PBF DISTI # IRFU5410PBF	Infineon Technologies AG	P-Ch 100V 13A 66W 0,205R TO251AA RoHS: Compliant	345	15:€0.6105 75:€0.3705 300:€0.3105 600:€0.2990
IRFU5410PBF	International Rectifier	RoHS: Compliant	Europe - 150
IRFU5410PBF DISTI # 1013472	Infineon Technologies AG	MOSFET, P, I-PAK RoHS: Compliant	0	1:$1.3200 10:$1.1200 100:$0.8580 500:$0.7590 1000:$0.5990 2500:$0.5800
IRFU5410PBF DISTI # 1013472	Infineon Technologies AG	MOSFET, P, I-PAK RoHS: Compliant	7	5:£0.6000 25:£0.5430 100:£0.4100 250:£0.3810 500:£0.3510

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IRFU5410PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes