NTHD2110TT1G

Mfr. #:: NTHD2110TT1G
Manufacturer:: ON Semiconductor
Description:: MOSFET P-CH 12V 4.5A CHIPFET
Lifecycle:: New from this manufacturer.
Datasheet:: NTHD2110TT1G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NTHD2110TT1G Datasheet NTHD2110TT1G Datasheet (P4-P6)NTHD2110TT1G Datasheet (P7)
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Tags: NTHD2, NTHD, NTH

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NTHD2110TT1G Description

***emi: Power MOSFET -12V P-Channel with Integrated TVS

***r Electronics: Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***i-Key: MOSFET P-CH 12V 4.5A CHIPFET

*** Electronics: SMALL SIGNAL P-CHANNEL MOSFET

***emi: Single P-Channel Power MOSFET, -12V, -5A, 43mΩ

***ical: Trans MOSFET P-CH Si 12V 5A 6-Pin MCPH T/R

***r Electronics: Power Field-Effect Transistor, 5A I(D), 12V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***enic: 12V 5A 33m´Î@4.5V3A 1.5W 1.4V@1mA 155pF@6V P Channel 660pF@6V 6.9nC@4.5V +150¡Í@(Tj) SOT-363-6 MOSFETs ROHS

***ark: Pch 1.8V Drive Series / Reel Rohs Compliant: Yes

***i-Key: MOSFET P-CH 12V 5A SC88FL/MCPH6

***(Formerly Allied Electronics): NTHS5404T1G N-channel MOSFET Transistor; 7.2 A; 20 V; 8-Pin ChipFET

***emi: Single N-Channel ChipFET™ Power MOSFET 20V 7.2A 30mΩ

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOT-323; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.2A; Package / Case:1206A; Power Dissipation Pd:2.5W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:20V; Voltage Vgs Max:600mV; Voltage Vgs Rds on Measurement:4.5V

***ark: MOSFET Transistor, N Channel, 5.5 A, 20 V, 0.029 ohm, 4.5 V, 1.3 V

***emi: Single N-Channel Power MOSFET, 20V, 5.5A, 38mΩ

***nell: MOSFET, N-CH, 20V, 5.5A, SC-88-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.3V; Power Dissipation Pd: 1.5W; Transistor Case Style: SC-88; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ure Electronics: Single P-Channel 20 V 36 mO 38 nC Surface Mount Mosfet - ChipFET-1206-8

***ical: Trans MOSFET P-CH 20V 6A 8-Pin SMD T/R

***ment14 APAC: MOSFET, P-CH, 20V, 6A, 1206 CHIPFET;

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.03Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V Rohs Compliant: No

*** Source Electronics: MOSFET N/P-CH 20V 4A 1206-8 / Trans MOSFET N/P-CH 20V 4A/3.1A 8-Pin Chip FET T/R

***enic: 20V 4A 3.1W 36m´Î@4.5V6A 800mV@250Ã×A 1PCSN-Channel&1PCSP-Channel 1206-8 ChipFET MOSFETs ROHS

***nell: MOSFET, N & P CH, 20V, 0.03OHM, 4A, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:3.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:1206; No. of Pins:8; MSL:-

***ure Electronics: Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET

***et: Transistor MOSFET Array N-CH/P-CH 20V 4A 8-Pin Chip FET T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:8-1206; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

***ment14 APAC: DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:4A; Continuous Drain Current Id, P Channel:-3.1A; Drain Source Voltage Vds, N Channel:20V

***nell: MOSFET, NP CH, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8

Market price

Part #	Mfg.	Description	Stock	Price
NTHD2110TT1G DISTI # NTHD2110TT1G-ND	ON Semiconductor	MOSFET P-CH 12V 4.5A CHIPFET RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
NTHD2110TT1G	ON Semiconductor	Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	45000	1000:$0.3000 500:$0.3200 100:$0.3300 25:$0.3500 1:$0.3700

Image	Part #	Description
	Mfr.#: NTHD2102P OMO.#: OMO-NTHD2102P-1190	New and Original
	Mfr.#: NTHD2102PT1 OMO.#: OMO-NTHD2102PT1-ON-SEMICONDUCTOR	MOSFET 2P-CH 8V 3.4A CHIPFET
	Mfr.#: NTHD2102PT1G OMO.#: OMO-NTHD2102PT1G-ON-SEMICONDUCTOR	MOSFET 2P-CH 8V 3.4A CHIPFET
	Mfr.#: NTHD2102PT1G , FLZ22VB OMO.#: OMO-NTHD2102PT1G-FLZ22VB-1190	New and Original
	Mfr.#: NTHD2110T1G OMO.#: OMO-NTHD2110T1G-1190	New and Original
	Mfr.#: NTHD2110TT1G OMO.#: OMO-NTHD2110TT1G-ON-SEMICONDUCTOR	MOSFET P-CH 12V 4.5A CHIPFET

NTHD2110TT1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes