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NTHD2110TT1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
1 Publication Order Number:
NTHD2110T/D
NTHD2110T
Power MOSFET
-12 V, -6.4 A, Single P-Channel +TVS,
ChipFETt Package
Features
•Low R
DS(on)
MOSFET and TVS Diode ChipFET Package
•Integrated Drain Side TVS for 15 kV Contact Discharge ESD
Protection
•1.8 V Gate Rating
•This is a Pb-Free Device
Applications
•Battery Switch and Load Management Applications in Portable
Equipment
MOSFET MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain-to-Source Voltage V
DSS
-12 V
Gate-to-Source Voltage V
GS
"8 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
-4.5
A
T
A
= 85°C -3.2
t ≤ 5 s T
A
= 25°C -6.4
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.1
W
t ≤ 5 s 2.3
Operating Junction and Storage Temperature T
J
,
T
STG
-55 to
150
°C
Storage Temperature Range TJ -55 to
150
°C
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
L
260 °C
TVS MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Power Dissipation
8 x 20 ms Double Exponential Waveform
(Note 2)
PPK 150 W
Human Body Model (HBM)
Machine Model (MM)
IEC 61000-4-2 Specification (Contact)
ESD 16
400
30
kV
V
kV
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction-to-Ambient – Steady State (Note 1)
R
q
JA
110
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 1)
R
q
JA
55
Junction-to-Ambient - Steady State Min Pad
(Note 3)
R
q
JA
225
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Nonrepetitive Current Pulse per Figure 11.
3. Surface Mounted on FR4 board using 1 in sq size (Cu area = 1.127 in sq
[1 oz] included traces).
G
S
D
http://onsemi.com
-12 V
53 mW @ -2.5 V
40 mW @ -4.5 V
80 mW @ -1.8 V
R
DS(on)
MAX
-6.4 A
I
D
MAXV
(BR)DSS
FTZ = Specific Device Code
M = Month Code
G = Pb-Free Package
ChipFET
CASE 1206A
STYLE 6
AND
PIN
A
1
8
PIN
CONNECTIONS
MARKING
DIAGRAM
1
2
3
4
8
7
6
5
FTZ M
G
A
C
12 21.5
V
C
@ MAX I
PP
6.2 A
I
PP
MAX
V
RWM
TVS
P-Channel MOSFET TVS Diode
8
7
6
54
3
2
1
C/D
D
D
S
A
D
D
G
Device Package Shipping
†
ORDERING INFORMATION
NTHD2110TT1G ChipFET
(Pb-Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTHD2110T
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(Br)DSS
V
GS
= 0 V
dc
, I
D
= -250 mA
-12 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= -12 V,
V
GS
= 0 V
T
J
= 25°C -1.0 mA
T
J
= 85°C -5.0
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "8.0 V "0.1
mA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 mA
-0.40 -0.85 V
Drain-to-Source On-Resistance R
DS(on)
V
GS
= -4.5 V, I
D
= -6.4 A 33 40 mW
V
GS
= -2.5 V, I
D
= -2.0 A 42 53
V
GS
= -1.8 V, I
D
= -1.7 A 57 80
Forward Transconductance g
FS
V
DS
= -5.0 V, I
D
= -6.4 A 13.7 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
iss
V
DS
= -6.0 V, V
GS
= 0 V
f = 1.0 MHz
1072
pF
Output Capacitance C
oss
260
Reverse Transfer Capacitance C
rss
134
Total Gate Charge Q
G(TOT)
V
GS
= -4.5 V, V
DS
= -6.0 V,
I
D
= -6.4 A
10.5 14
nC
Threshold Gate Charge Q
G(TH)
0.6
Gate-to-Source Charge Q
GS
1.3
Gate-to-Drain Charge Q
GD
2.8
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
t
d(on)
V
DD
= -6.0 V, V
GS
= -4.5 V,
I
D
= -1.0 A, R
G
= 6.0 W
7.5
ns
Rise Time t
r
8.6
Turn-Off Delay Time t
d(off)
99.7
Fall Time t
f
49.8
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
I
S
= -1.7 A,
V
GS
= 0 V
T
J
= 25°C -0.7 -1.0 V
T
J
= 125°C -0.6
Reverse Recovery Time t
RR
V
GS
= 0 V,
dI
S
/ dt = 100 A/ms, I
S
= -1.7 A
41.7 ns
Reverse Recovery Charge Q
RR
V
GS
= 0 V,
dI
S
/ dt = 100 A/ms, I
S
= -1.7 A
22 nC
4. Surface Mounted on FR4 board using 1 in sq size (Cu area = 1.127 in sq [1 oz] included traces).
5. Surface mounted on FR4 board using the minimum recommended pad size.
6. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
NTHD2110T
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic UnitMaxTypMinTest ConditionSymbol
TVS DIODE
Reverse Working Voltage (Note 8)
V
RWM
12 V
Breakdown Voltage (Note 9) V
BR
I
T
= 1 mA 14.5 15.7 V
Reverse Leakage Current I
R
V
RWM
= 12 V 0.6 10 nA
Clamping Voltage (Note 10) V
C
I
PP
= 1 A (8 x 20 ms Waveform)
15.7 V
Clamping Voltage (Note 10) V
C
I
PP
= 5 A (8 x 20 ms Waveform)
19.1 V
Maximum Peak Pulse Current (Note 10) I
PP
8 x 20 ms Waveform
6.2 A
Capacitance CJ V
R
= 0 V, f = 1 MHz
(Anode-to-GND)
60 pF
8. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
9. V
BR
is measured at pulse test current I
T
.
10.Pulse waveform per Figure 11.
P1-P3P4-P6P7-P7

NTHD2110TT1G

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 12V 4.5A CHIPFET
Lifecycle:
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