SUP50N10-21P-GE3

Mfr. #:: SUP50N10-21P-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 100V N-Channel
Lifecycle:: New from this manufacturer.
Datasheet:: SUP50N10-21P-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SUP50N10-21P-GE3 Datasheet SUP50N10-21P-GE3 Datasheet (P4-P6)SUP50N10-21P-GE3 Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 50 A

Rds On - Drain-Source Resistance:: 17 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 68 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 125 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Tube

Series:: SUP

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 40 S

Fall Time:: 7 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 22 ns

Typical Turn-On Delay Time:: 10 ns

Part # Aliases:: SUP40N10-30-GE3

Unit Weight:: 0.211644 oz

Tags: SUP50N1, SUP50N, SUP50, SUP5, SUP

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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SUP50N10-21P-GE3 Description

***ure Electronics: Single N-Channel 100 V 0.021 O 30.2 nC Flange Mount Power Mosfet - TO-220AB

***ical: Trans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-220AB

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***et: Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220AB

***i-Key: MOSFET N-CH 100V 60A TO220AB

***nell: N CHANNEL MOSFET, 100V, 60A; Transistor; N CHANNEL MOSFET, 100V, 60A; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 18.3mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; No. of Pins: 3

***i-Key: MOSFET N-CH 100V 54A TO220-3

*** Electronics: N-CHANNEL POWER MOSFET

***et Europe: Trans MOSFET N-CH 100V 47A 3-Pin TO-220AB Tube

*** Electronics: MOSFET SIPMOS PWR-TRANS 100V 47A

***ineon: Summary of Features: N-Channel; Enhancement mode; Logic Level; 175C operating temperature; Avalanche rated; dv/dt rated; Green Package (lead free) | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting

***ure Electronics: Single N-Channel 100 V 2.8 W 31.9 nC Silicon Through Hole Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220AB Tube

***des Inc SCT: 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS

***et: MOSFET BVDSS: 61V~100V TO220-3 TUBE 50PCS

***ure Electronics: Single N-Channel 75 V 10.6 mOhm 55 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 75V 59A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 59A I(D), 75V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 75V, 59A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0106ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;

***ineon: Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

***ure Electronics: FDPF085N10A Series 100 V 40 A 8.5 mOhm N-Ch PowerTrench® MOSFET - TO-220F

***emi: N-Channel PowerTrench® MOSFET 100V, 40A, 8.5mΩ

***Yang: Trans MOSFET N-CH 100V 40A 3-Pin(3+Tab) TO-220F T/R - Rail/Tube

***nell: MOSFET, N-CH, 100V, 40A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

*** Stop Electro: Power Field-Effect Transistor, 40A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Market price

Part #	Mfg.	Description	Stock	Price
SUP50N10-21P-GE3 DISTI # SUP50N10-21P-GE3-ND	Vishay Siliconix	MOSFET N-CH 100V 50A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	150In Stock	100:$1.2667 10:$1.6030 1:$1.8100
SUP50N10-21P-GE3 DISTI # 78-SUP50N10-21P-GE3	Vishay Intertechnologies	MOSFET 100V N-Channel RoHS: Compliant	51	1:$1.6500 10:$1.3600 100:$1.0400 500:$0.8940 1000:$0.7050
SUP50N10-21P-GE3 DISTI # TMOSP11137	Vishay Intertechnologies	N-CH 100V 50A 21mOhm TO220 RoHS: Compliant	Stock DE - 0Stock US - 0	500:$0.9915 1000:$0.7649
SUP50N1021PGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	Europe - 500
SUP50N10-21P-GE3	Vishay Intertechnologies	MOSFET 100V N-Channel	Americas -

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Availability

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On Order:: 1984
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Current price of SUP50N10-21P-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

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SUP50N10-21P-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes