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SSM2212CPZ-R7

SSM2212CPZ-R7
Mfr. #:
SSM2212CPZ-R7
Manufacturer:
Analog Devices Inc.
Description:
Bipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor
Lifecycle:
New from this manufacturer.
Datasheet:
SSM2212CPZ-R7 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM2212CPZ-R7 DatasheetSSM2212CPZ-R7 Datasheet (P4-P6)SSM2212CPZ-R7 Datasheet (P7-P9)SSM2212CPZ-R7 Datasheet (P10-P12)SSM2212CPZ-R7 Datasheet (P13)
ECAD Model:
More Information:
SSM2212CPZ-R7 more Information SSM2212CPZ-R7 Product Details
Product Attribute
Attribute Value
Manufacturer:
Analog Devices Inc.
Product Category:
Bipolar Transistors - BJT
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
LFCSP-16
Transistor Polarity:
NPN
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
40 V
Collector- Base Voltage VCBO:
40 V
Collector-Emitter Saturation Voltage:
50 mV
Maximum DC Collector Current:
20 mA
Gain Bandwidth Product fT:
200 MHz
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Series:
SSM2212
DC Current Gain hFE Max:
2400 at 1 mA, 15 V, 2400 at 1 mA, 15 V
Packaging:
Reel
Brand:
Analog Devices
DC Collector/Base Gain hfe Min:
300 at 1 mA, 15 V, 300 at 1 mA, 15 V
Moisture Sensitive:
Yes
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
1500
Subcategory:
Transistors
Tags
SSM2212C, SSM2212, SSM221, SSM22, SSM2, SSM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 40V 0.02A 16-Pin LFCSP EP T/R
***ark
Low Noise Matched Dual NPN Transistor, REEL7
***et Europe
Trans GP BJT NPN 40V 0.02A 16-Pin LFCSP T/R
***ponent Sense
IC SMD LOW-NOISE FOR AUDIO DUAL MATCHED
***i-Key
TRANS 2NPN 40V 0.02A 16WLCSP
***hardson RFPD
RF POWER TRANSISTOR
***log Devices
The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high- order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications. The SSM2212 SOIC performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C. The SSM2212 is available in 8-lead SOIC and 16-lead LFCSP packages.
SSM2212 Dual-Matched NPN Transistor
Analog Devices SSM2212 features a dual, NPN-matched transistor pair specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28Ω) and high current gain (hFE typically exceeds 600 at IC = 1mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications.Learn More
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of SSM2212CPZ-R7 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.73
$6.73
10
$6.06
$60.60
25
$5.70
$142.50
50
$5.36
$268.00
100
$5.09
$509.00
250
$4.78
$1 195.00
500
$4.34
$2 170.00
1000
$3.72
$3 720.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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