IRF6674TR1PBF

Mfr. #:: IRF6674TR1PBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
Lifecycle:: New from this manufacturer.
Datasheet:: IRF6674TR1PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF6674TR1PBF Datasheet IRF6674TR1PBF Datasheet (P4-P6)IRF6674TR1PBF Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DirectFET-MZ

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 67 A

Rds On - Drain-Source Resistance:: 9 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4.9 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 24 nC

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 89 W

Configuration:: Single

Packaging:: Reel

Height:: 0.7 mm

Length:: 6.35 mm

Transistor Type:: 1 N-Channel

Width:: 5.05 mm

Brand:: Infineon / IR

Forward Transconductance - Min:: 16 S

Fall Time:: 8.7 ns

Moisture Sensitive:: Yes

Product Type:: MOSFET

Rise Time:: 12 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001571484

Tags: IRF667, IRF66, IRF6, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6674TR1PBF Description

***ied Electronics & Automation: MOSFET, N-Ch, VDSS 60V, RDS(ON) 9 mOhm, ID 13.4A, DirectFET

***ical: Trans MOSFET N-CH 60V 13.4A 7-Pin Direct-FET MZ T/R

***i-Key: MOSFET N-CH 60V 13.4A DIRECTFET

***ukat: N-Ch 60V 67A 89W 0,011R MZ

***ark: ; Continuous Drain Current, Id:13.4A; On Resistance, Rds(on):9mohm; Current, Idm pulse:134A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

***ernational Rectifier: A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 67 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***nell: MOSFET, N-CH, 60V, DIRECTFETMX; Transistor Polarity:N; On State Resistance:9mohm; Transistor Case Style:MZ; Alternate Case Style:DirectFET; Case Style:MZ; Cont Current Id:13.4A; Max Voltage Vgs th:4.9V; Min Voltage Vgs th:3V; Pulse Current Idm:134A; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:60V; Typ Voltage Vgs th:4V; Voltage Vgs Rds on Measurement:10V

***ment14 APAC: MOSFET, N CH, 60V, 13.4A, DFET MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:13.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.6W; Transistor Case Style:DirectFET; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:13.4A; Package / Case:MZ; Power Dissipation Pd:3.6W; Pulse Current Idm:134A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.9V; Voltage Vgs th Min:3V

Market price

Part #	Mfg.	Description	Stock	Price
IRF6674TR1PBF DISTI # IRF6674TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 60V 13.4A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6674TR1PBF DISTI # IRF6674TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 60V 13.4A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6674TR1PBF DISTI # IRF6674TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 13.4A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6674TR1PBF DISTI # 70018851	Infineon Technologies AG	MOSFET,N-Ch,VDSS 60V,RDS(ON) 9 mOhm,ID 13.4A,DirectFET RoHS: Compliant	0	1000:$1.7300 2000:$1.5800
IRF6674TR1PBF DISTI # 942-IRF6674TR1PBF	Infineon Technologies AG	MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg RoHS: Compliant	0

Related products

Image	Part #	Description
	Mfr.#: IRF6674TRPBF OMO.#: OMO-IRF6674TRPBF	MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
	Mfr.#: IRF6674TR1PBF OMO.#: OMO-IRF6674TR1PBF	MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
	Mfr.#: IRF6678TR1PBF OMO.#: OMO-IRF6678TR1PBF	MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
	Mfr.#: IRF6678 OMO.#: OMO-IRF6678-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 30A DIRECTFET
	Mfr.#: IRF6678TR1PBF OMO.#: OMO-IRF6678TR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 30A DIRECTFET
	Mfr.#: IRF6678TR1 OMO.#: OMO-IRF6678TR1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 30A DIRECTFET
	Mfr.#: IRF6674TRPBF OMO.#: OMO-IRF6674TRPBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
	Mfr.#: IRF6674TR1PBF OMO.#: OMO-IRF6674TR1PBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
	Mfr.#: IRF6678TRPBF OMO.#: OMO-IRF6678TRPBF-INFINEON-TECHNOLOGIES	MOSFET 30V N-CH HEXFET 2.2mOhms 43nC

Availability

Stock:: Available
On Order:: 3000
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Current price of IRF6674TR1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

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IRF6674TR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes