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IRF6678TR1PBF

IRF6678TR1PBF
Mfr. #:
IRF6678TR1PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF6678TR1PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DirectFET-MX
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
30 A
Rds On - Drain-Source Resistance:
3 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
43 nC
Pd - Power Dissipation:
89 W
Configuration:
Single
Packaging:
Reel
Height:
0.7 mm
Length:
6.35 mm
Transistor Type:
1 N-Channel
Width:
5.05 mm
Brand:
Infineon / IR
Moisture Sensitive:
Yes
Product Type:
MOSFET
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Part # Aliases:
SP001525486
Unit Weight:
0.017637 oz
Tags
IRF6678T, IRF6678, IRF667, IRF66, IRF6, IRF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE, DIRECTFET MX PKG
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
***nell
MOSFET, N, DIRECTFET, 30V, MX; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:30A; Resistance, Rds On:1.7mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.35V; Case Style:MX; Termination Type:SMD; Base Number:6678; Current, Idm Pulse:240A; Power Dissipation:2.8mW; SMD Marking:2.8; Voltage, Vds:30V; Voltage, Vgs th Max:2.25V; Voltage, Vgs th Min:1.35V
Part # Mfg. Description Stock Price
IRF6678TR1PBF
DISTI # IRF6678TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6678TR1PBF
    DISTI # IRF6678TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6678TR1PBF
      DISTI # IRF6678TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6678TR1PBF
        DISTI # 70018852        		Infineon Technologies AG30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE,DIRECTFET MX PKG
        RoHS: Compliant        		0
        • 1000:$2.4300
        • 2000:$2.2300
        IRF6678TR1PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***770
        • 405:$2.2077
        • 94:$2.4753
        • 1:$4.0140
        IRF6678TR1PBF
        DISTI # 1436935        		Infineon Technologies AGMOSFET, N, DIRECTFET, 30V, MX
        RoHS: Compliant        		0
        • 500:$3.3100
        • 1000:$3.3100
        • 250:$3.4900
        • 100:$3.6300
        • 10:$4.0000
        • 1:$4.2700
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        		 MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
        Availability
        Stock:
        Available
        On Order:
        5500
        Enter Quantity:
        Current price of IRF6678TR1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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