IGD06N60TATMA1

Mfr. #:: IGD06N60TATMA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop
Lifecycle:: New from this manufacturer.
Datasheet:: IGD06N60TATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IGD06N60TATMA1 Datasheet IGD06N60TATMA1 Datasheet (P4-P6)IGD06N60TATMA1 Datasheet (P7-P9)IGD06N60TATMA1 Datasheet (P10-P12)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-252-3

Mounting Style:: SMD/SMT

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.5 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 12 A

Pd - Power Dissipation:: 88 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: TRENCHSTOP IGBT

Packaging:: Reel

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 2500

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IGD06N60T IGD6N6TXT SP000960698

Unit Weight:: 0.011175 oz

Tags: IGD06, IGD0, IGD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGD06N60TATMA1 Description

***ical: Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-252

***nell: TRANSISTOR, IGBT, 600V, 12A, TO-252; DC Collector Current: 12A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 88W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP™ Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: The 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO252-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ow.cn: Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R

***ark: Igbt, Single, 600V, 12A, To-252; Dc Collector Current:12A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-252; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Washing machines; General purpose inverters; Aircon compressors; Hard switching topologies up to 1.0kW

***ical: Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 27pF 50volts C0G 5%

***or: DISCRETE IGBT WITHOUT ANTI-PARAL

***ical: Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 5 A high speed

***ure Electronics: H Series 600 V 10 A SMT Trench Gate Field-Stop IGBT - TO-252

***nell: IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 83W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(2+Tab) DPAK T/R

***(Formerly Allied Electronics): 600V DC-1 KHZ (STANDARD) COPACK IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10SDTRPBF

***-Wing Technology: Tube Surface Mount ROHS3Compliant IGBT Transistor 1.8V @ 15V 8A 14A 38W 28ns

***nell: IGBT, COPAK, D-PAK; DC Collector Current: 14A; Collector Emitter Saturation Voltage Vce(on): 1.1V; Power Dissipation Pd: 38W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operati

***ical: Trans IGBT Chip N-CH 600V 15A 55000mW 3-Pin(2+Tab) DPAK T/R

***ure Electronics: STGD7NB60S Series 600 V 7 A SMT N-Channel Power MESHTM IGBT - TO-252-3, DPAK

***r Electronics: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 7 Amp

***icroelectronics SCT: Short-circuit rugged IGBT, DPAK, Tape and Reel

***ernational Rectifier: 600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:8.5A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:38W; Package/Case:TO-252AA ;RoHS Compliant: Yes

***nell: IGBT, 600V, 8.5A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:8.5A; Voltage, Vce Sat Max:2.6V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:34A; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:11ns; Transistors, No. of:1

Market price

Part #	Mfg.	Description	Stock	Price
IGD06N60TATMA1 DISTI # V72:2272_06384581	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1990	75000:$0.4081 30000:$0.4132 15000:$0.4184 6000:$0.4303 3000:$0.4349 1000:$0.4660 500:$0.5955 250:$0.6803 100:$0.6875 50:$0.8299 25:$0.9102 10:$1.0113 1:$1.1855
IGD06N60TATMA1 DISTI # IGD06N60TATMA1CT-ND	Infineon Technologies AG	IGBT 600V 12A 88W TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IGD06N60TATMA1 DISTI # IGD06N60TATMA1DKR-ND	Infineon Technologies AG	IGBT 600V 12A 88W TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IGD06N60TATMA1 DISTI # IGD06N60TATMA1TR-ND	Infineon Technologies AG	IGBT 600V 12A 88W TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.4917
IGD06N60TATMA1 DISTI # 29028577	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1990	15:$1.1855
IGD06N60TATMA1 DISTI # IGD06N60TATMA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: IGD06N60TATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4249 15000:$0.4319 10000:$0.4469 5000:$0.4639 2500:$0.4809
IGD06N60TATMA1 DISTI # IGD06N60TATMA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Bulk (Alt: IGD06N60TATMA1) RoHS: Compliant Min Qty: 863 Container: Bulk	Americas - 0	8630:$0.3679 4315:$0.3749 2589:$0.3879 1726:$0.4019 863:$0.4169
IGD06N60TATMA1 DISTI # SP000960698	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R (Alt: SP000960698) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.3739 15000:€0.4029 10000:€0.4369 5000:€0.4769 2500:€0.5829
IGD06N60TATMA1 DISTI # 13AC8999	Infineon Technologies AG	TRANSISTOR, IGBT, 600V, 12A, TO-252,DC Collector Current:12A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:88W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-252,No. of Pins:3Pins,RoHS Compliant: Yes	2490	1000:$0.5070 500:$0.6420 250:$0.6850 100:$0.7270 50:$0.8000 25:$0.8730 10:$0.9460 1:$1.1000
IGD06N60TATMA1 DISTI # 726-IGD06N60TATMA1	Infineon Technologies AG	IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod RoHS: Compliant	1863	1:$1.0900 10:$0.9370 100:$0.7200 500:$0.6360 1000:$0.5020 2500:$0.4450 10000:$0.4290
IGD06N60TATMA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA RoHS: Compliant	394	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
IGD06N60TATMA1 DISTI # IGD06N60T	Infineon Technologies AG	600V 12A 88W TO252 RoHS: Compliant	0	5:€1.2500 50:€0.6500 200:€0.3500 500:€0.3300
IGD06N60TATMA1 DISTI # 2725778	Infineon Technologies AG	TRANSISTOR, IGBT, 600V, 12A, TO-252 RoHS: Compliant	2490	10:$1.3900 1:$1.6000
IGD06N60TATMA1 DISTI # 2725778	Infineon Technologies AG	TRANSISTOR, IGBT, 600V, 12A, TO-252	4990	500:£0.4850 250:£0.5180 100:£0.5500 10:£0.7710 1:£0.9500

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IGD06N60TATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes