IGD06N60TATMA1

IGD06N60T
TRENCHSTOP Series q
IFAG IPC TD VLS
1 Rev. 2.2, 20.09.2013
Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology
Features:
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
TRENCHSTOP and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Low EMI
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Variable Speed Drive for washing machines and air conditioners
Buck converters
Type V
CE
I
C;Tc=100°C
V
CE(sat),Tj=25°C
T
j,max
Marking Package
IGD06N60T 600V 6A 1.5V
175C
G06T60 PG-TO252-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage, T
j
≥ 25C
V
CE
600 V
DC collector current, limited by T
jmax
T
C
= 25C
T
C
= 100C
I
C
12
6
A
Pulsed collector current, t
p
limited by T
jmax
I
Cpul s
18
Turn off safe operating area, V
CE
= 600V, T
j
= 175C, t
p
= 1µs
-
18
Gate-emitter voltage
V
GE
20
V
Short circuit withstand time
2)
V
GE
= 15V, V
CC
400V, T
j
150C
t
SC
5
s
Power dissipation
T
C
= 25C
P
tot
88 W
Operating junction temperature
T
j
-40...+175
C
Storage temperature
T
st g
-55...+150
Soldering temperature
reflow soldering, MSL1
260
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO252-3 (D-PAK)
IGD06N60T
TRENCHSTOP Series q
IFAG IPC TD VLS
2 Rev. 2.2, 20.09.2013
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
R
thJ C
1.7 K/W
Thermal resistance,
junction – ambient
R
thJ A
62
Electrical Characteristic, at T
j
= 25 C, unless otherwise specified
Parameter Symbol Conditions
Value
Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage
V
(BR ) C ES
V
GE
=0V,
I
C
=0.25mA
600 - - V
Collector-emitter saturation voltage
V
CE( s at)
V
GE
= 15V, I
C
=6A
T
j
=25C
T
j
=175C
-
-
1.5
1.8
2.05
Gate-emitter threshold voltage
V
GE( t h)
I
C
=0.18mA,
V
CE
=V
GE
4.1 4.6 5.7
Zero gate voltage collector current
I
CE S
V
CE
=600V,
V
GE
=0V
T
j
=25C
T
j
=175C
-
-
-
-
40
700
µA
Gate-emitter leakage current
I
GE S
V
CE
=0V,V
GE
=20V
- - 100 nA
Transconductance
g
fs
V
CE
=20V, I
C
=6A
- 3.6 - S
Integrated gate resistor
R
Gin t
none Ω
Dynamic Characteristic
Input capacitance
C
iss
V
CE
=25V,
V
GE
=0V,
f=1MHz
- 368 - pF
Output capacitance
C
os s
- 28 -
Reverse transfer capacitance
C
rs s
- 11 -
Gate charge
Q
Ga t e
V
CC
=480V, I
C
=6A
V
GE
=15V
- 42 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
- 7 - nH
Short circuit collector current
1)
I
C( S C )
V
GE
=15V,t
SC
5s
V
CC
= 400V,
T
j
= 25 C
- 55 - A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
IGD06N60T
TRENCHSTOP Series q
IFAG IPC TD VLS
3 Rev. 2.2, 20.09.2013
Switching Characteristic, Inductive Load, at T
j
=25 C
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
t
d( o n )
T
j
=25 C,
V
CC
=400V,I
C
=6A,
V
GE
=0/15V,r
G
=23 ,
L
=60nH,C
=40pF
L
, C
from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode used IDP06E60
- 9 - ns
Rise time
t
r
- 6 -
Turn-off delay time
t
d( o f f)
- 130 -
Fall time
t
f
- 58 -
Turn-on energy
E
on
- 0.09 - mJ
Turn-off energy
E
off
- 0.11 -
Total switching energy
E
ts
- 0.2 -
Switching Characteristic, Inductive Load, at T
j
=175 C
Parameter Symbol Conditions
Value
Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time
t
d( o n )
T
j
=175 C,
V
CC
=400V,I
C
=6A,
V
GE
=0/15V,r
G
= 23
L
=60nH,C
=40pF
L
, C
from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode used IDP06E60
- 9 - ns
Rise time
t
r
- 8 -
Turn-off delay time
t
d( o f f)
- 165 -
Fall time
t
f
- 84 -
Turn-on energy
E
on
- 0.14 - mJ
Turn-off energy
E
off
- 0.18 -
Total switching energy
E
ts
- 0.335 -

IGD06N60TATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop
Lifecycle:
New from this manufacturer.
Delivery:
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