IGD06

IGD06N60TATMA1 vs IGD06N60T vs IGD06N60TS

 
PartNumberIGD06N60TATMA1IGD06N60TIGD06N60TS
DescriptionIGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop IGBT Transistors LOW LOSS IGBT TECH 600V 6A
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-252-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.5 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C12 A--
Pd Power Dissipation88 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesTRENCHSTOP IGBT--
PackagingReel--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGD06N60T IGD6N6TXT SP000960698--
Unit Weight0.011175 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IGD06N60TATMA1 IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop
IGD06N60TATMA1 IGBT 600V 12A 88W TO252-3
IGD06N60T IGBT Transistors LOW LOSS IGBT TECH 600V 6A
IGD06N60TS New and Original
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