PartNumber | IGD06N60TATMA1 | IGD06N60T | IGD06N60TS |
Description | IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop | IGBT Transistors LOW LOSS IGBT TECH 600V 6A | |
Manufacturer | Infineon | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-252-3 | - | - |
Mounting Style | SMD/SMT | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Emitter Saturation Voltage | 1.5 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 12 A | - | - |
Pd Power Dissipation | 88 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Series | TRENCHSTOP IGBT | - | - |
Packaging | Reel | - | - |
Brand | Infineon Technologies | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | IGBTs | - | - |
Tradename | TRENCHSTOP | - | - |
Part # Aliases | IGD06N60T IGD6N6TXT SP000960698 | - | - |
Unit Weight | 0.011175 oz | - | - |