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FCP165N60E

FCP165N60E
Mfr. #:
FCP165N60E
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 600V 23A N-Chnl SuperFET Easy-Drive
Lifecycle:
New from this manufacturer.
Datasheet:
FCP165N60E Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FCP165N60E more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
23 A
Rds On - Drain-Source Resistance:
165 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V, 30 V
Qg - Gate Charge:
57 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
227 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
SuperFET II
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FCP165N60E
Transistor Type:
1 N-Channel
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
20 S
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
100 ns
Typical Turn-On Delay Time:
22 ns
Unit Weight:
0.063493 oz
Tags
FCP165, FCP16, FCP1, FCP
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 23A, 165mΩ, TO-220
***ark
SuperFET2 600V 165mohm slow version - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220
***et
Trans MOSFET N-CH 600V 23A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V TO220
***et Europe
SUPERFET2 600V 165MOHM SLOW VERSION
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 23A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.132ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:227W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 600V, 23A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.132ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Part # Mfg. Description Stock Price
FCP165N60E
DISTI # V99:2348_14141720		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VE691
  • 800:$1.6660
  • 100:$2.0030
  • 25:$2.2630
  • 10:$2.2860
  • 1:$2.9832
FCP165N60E
DISTI # FCP165N60E-ND		ON SemiconductorMOSFET N-CH 600V 23A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		800In Stock
  • 800:$1.7984
  • 100:$2.1126
  • 25:$2.4376
  • 10:$2.5780
  • 1:$2.8700
FCP165N60E
DISTI # 25887488		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VE691
  • 5:$2.9832
FCP165N60E
DISTI # FCP165N60E		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VERSION (Alt: FCP165N60E)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 50:€1.2900
  • 100:€1.2900
  • 500:€1.2900
  • 1000:€1.2900
  • 25:€1.3900
  • 10:€1.4900
  • 1:€1.7900
FCP165N60E
DISTI # FCP165N60E		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VERSION - Rail/Tube (Alt: FCP165N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$1.1900
  • 800:$1.2900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
FCP165N60E
DISTI # 84Y5816		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.132ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes666
  • 500:$1.7300
  • 250:$1.9200
  • 100:$2.0300
  • 50:$2.1300
  • 25:$2.2400
  • 10:$2.3400
  • 1:$2.7600
FCP165N60E
DISTI # 512-FCP165N60E		ON SemiconductorMOSFET 600V 23A N-Chnl SuperFET Easy-Drive
RoHS: Compliant		95
  • 1:$2.7300
  • 10:$2.3200
  • 100:$2.0100
  • 250:$1.9000
  • 500:$1.7100
  • 1000:$1.4400
  • 2500:$1.3700
  • 5000:$1.3200
FCP165N60E
DISTI # 2565218		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3
RoHS: Compliant		666
  • 800:$2.6100
  • 100:$3.5600
  • 10:$4.3400
  • 1:$4.8600
FCP165N60E
DISTI # 2565218		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3696
  • 500:£1.1700
  • 250:£1.3100
  • 100:£1.3900
  • 10:£1.5900
  • 1:£2.1200
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Availability
Stock:
95
On Order:
2078
Enter Quantity:
Current price of FCP165N60E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.73
$2.73
10
$2.32
$23.20
100
$2.01
$201.00
250
$1.90
$475.00
500
$1.71
$855.00
1000
$1.44
$1 440.00
2500
$1.37
$3 425.00
5000
$1.32
$6 600.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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