FDP040N06

FDP040N06
Mfr. #:
FDP040N06
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET PT3 Low Qg 60V, 4.0Mohm
Lifecycle:
New from this manufacturer.
Datasheet:
FDP040N06 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
168 A
Rds On - Drain-Source Resistance:
3.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
4.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
102 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
231 W
Configuration:
Single
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FDP040N06
Transistor Type:
1 N-Channel
Type:
N-Channel Power Trench MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
169 S
Fall Time:
24 ns
Product Type:
MOSFET
Rise Time:
40 ns
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
55 ns
Typical Turn-On Delay Time:
30 ns
Unit Weight:
0.063493 oz
Tags
FDP04, FDP0, FDP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 60V 120A TO220
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Part # Mfg. Description Stock Price
FDP040N06
DISTI # FDP040N06-ND
ON SemiconductorMOSFET N-CH 60V 120A TO220
RoHS: Compliant
Min Qty: 400
Container: Tube
Limited Supply - Call
    FDP040N06
    DISTI # 512-FDP040N06
    ON SemiconductorMOSFET PT3 Low Qg 60V, 4.0Mohm
    RoHS: Compliant
    0
      FDP040N06Fairchild Semiconductor CorporationPower Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      800
      • 1000:$1.7100
      • 500:$1.8000
      • 100:$1.8800
      • 25:$1.9600
      • 1:$2.1100
      Image Part # Description
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      Mfr.#: FDP070AN06A0

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      MOSFET N-Channel PwrTrench
      FDP032N08B_F102

      Mfr.#: FDP032N08B_F102

      OMO.#: OMO-FDP032N08B-F102-1190

      Trans MOSFET N-CH 80V 120A 3-Pin TO-220 Rail - Bulk (Alt: FDP032N08B-F102)
      FDP038AN60

      Mfr.#: FDP038AN60

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      New and Original
      FDP040N06

      Mfr.#: FDP040N06

      OMO.#: OMO-FDP040N06-ON-SEMICONDUCTOR

      MOSFET N-CH 60V 120A TO220
      FDP050AN06A0

      Mfr.#: FDP050AN06A0

      OMO.#: OMO-FDP050AN06A0-ON-SEMICONDUCTOR

      MOSFET N-CH 60V 80A TO-220AB
      FDP075N15A.

      Mfr.#: FDP075N15A.

      OMO.#: OMO-FDP075N15A--1190

      New and Original
      FDP039N08B-F102

      Mfr.#: FDP039N08B-F102

      OMO.#: OMO-FDP039N08B-F102-ON-SEMICONDUCTOR

      MOSFET N CH 80V 120A TO-220
      Availability
      Stock:
      Available
      On Order:
      2000
      Enter Quantity:
      Current price of FDP040N06 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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