SPW55N80C3FKSA1

SPW55N80C3FKSA1
Mfr. #:
SPW55N80C3FKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 850V 54.9A TO247-3
Lifecycle:
New from this manufacturer.
Datasheet:
SPW55N80C3FKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
SPW55N80C3FKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
54.9 A
Rds On - Drain-Source Resistance:
77 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
288 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
500 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS C3
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
21 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
200 ns
Typical Turn-On Delay Time:
45 ns
Part # Aliases:
SP000849356 SPW55N80C3 SPW55N8C3XK
Unit Weight:
1.340411 oz
Tags
SPW55, SPW5, SPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 85 mOhm 285 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:850V; Continuous Drain Current Id:54.9A; On Resistance Rds(On):0.077Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
SPW55N80C3FKSA1
DISTI # V99:2348_06378036
Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
235
  • 720:$9.8580
  • 240:$11.3450
  • 25:$12.8690
  • 10:$13.4220
  • 1:$14.5870
SPW55N80C3FKSA1
DISTI # V36:1790_06378036
Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
  • 240000:$8.1290
  • 120000:$8.1360
  • 24000:$9.1960
  • 2400:$11.5200
  • 240:$11.9400
SPW55N80C3FKSA1
DISTI # SPW55N80C3FKSA1-ND
Infineon Technologies AGMOSFET N-CH 800V 54.9A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
47In Stock
  • 720:$10.6252
  • 240:$11.9442
  • 25:$13.5564
  • 10:$14.1430
  • 1:$15.3900
SPW55N80C3FKSA1
DISTI # 33368643
Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
1086
  • 2:$8.7409
SPW55N80C3FKSA1
DISTI # 33142793
Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
240
  • 240:$14.6406
SPW55N80C3FKSA1
DISTI # 33157361
Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
235
  • 1:$14.5870
SPW55N80C3XK
DISTI # SPW55N80C3FKSA1
Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: SPW55N80C3FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$8.7900
  • 1440:$8.9900
  • 960:$9.2900
  • 480:$9.5900
  • 240:$9.9900
SPW55N80C3FKSA1
DISTI # 85X7431
Infineon Technologies AGMOSFET Transistor, N Channel, 54.9 A, 850 V, 0.077 ohm, 10 V, 3 V RoHS Compliant: Yes0
  • 500:$10.2100
  • 250:$10.9200
  • 100:$11.4800
  • 50:$12.2600
  • 25:$13.0400
  • 10:$13.6000
  • 1:$14.8000
SPW55N80C3FKSA1.
DISTI # 28AC3069
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:54.9A,Drain Source Voltage Vds:850V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:500W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 500:$10.2100
  • 250:$10.9200
  • 100:$11.4800
  • 50:$12.2600
  • 25:$13.0400
  • 10:$13.6000
  • 1:$14.8000
SPW55N80C3FKSA1
DISTI # 726-SPW55N80C3FKSA1
Infineon Technologies AGMOSFET N-Ch 850V 54.9A TO247-3
RoHS: Compliant
231
  • 1:$14.6500
  • 10:$13.4700
  • 25:$12.9100
  • 100:$11.3700
  • 250:$10.8100
  • 500:$10.1100
SPW55N80C3
DISTI # 726-SPW55N80C3
Infineon Technologies AGMOSFET N-Ch 850V 54.9A TO247-3
RoHS: Compliant
0
  • 1:$14.6500
  • 10:$13.4700
  • 25:$12.9100
  • 100:$11.3700
  • 250:$10.8100
  • 500:$10.1100
SPW55N80C3FKSA1Infineon Technologies AGSingle N-Channel 800 V 85 mOhm 285 nC CoolMOS Power Mosfet - TO-247-3
RoHS: Compliant
240Tube
  • 240:$10.4100
SPW55N80C3FKSA1
DISTI # 8977677P
Infineon Technologies AGMOSFET N-CHANNEL 850V 54.9A TO247, TU194
  • 15:£10.2700
  • 6:£10.9700
SPW55N80C3FKSA1
DISTI # 8977677
Infineon Technologies AGMOSFET N-CHANNEL 850V 54.9A TO247, EA27
  • 15:£10.2700
  • 6:£10.9700
  • 1:£12.4900
SPW55N80C3FKSA1
DISTI # 2443414
Infineon Technologies AGMOSFET, N CH, 850V, 54.9A, TO-247-3203
  • 100:£8.8600
  • 50:£9.4500
  • 10:£10.0500
  • 5:£11.3900
  • 1:£11.8300
SPW55N80C3FKSA1
DISTI # 2443414
Infineon Technologies AGMOSFET, N CH, 850V, 54.9A, TO-247-3
RoHS: Compliant
191
  • 500:$15.2400
  • 250:$16.2900
  • 100:$17.1300
  • 25:$19.4600
  • 10:$20.3000
  • 1:$22.0800
SPW55N80C3FKSA1
DISTI # XSKDRABV0051999
Infineon Technologies AG 
RoHS: Compliant
720 in Stock0 on Order
  • 720:$12.2300
  • 240:$13.1000
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SIC DIODE TO247 650V
Availability
Stock:
219
On Order:
2202
Enter Quantity:
Current price of SPW55N80C3FKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$14.65
$14.65
10
$13.47
$134.70
25
$12.91
$322.75
100
$11.37
$1 137.00
250
$10.81
$2 702.50
500
$10.11
$5 055.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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