TGF2929-FL

TGF2929-FL
Mfr. #:
TGF2929-FL
Manufacturer:
Qorvo
Description:
RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2929-FL Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2929-FL more Information
Product Attribute
Attribute Value
Manufacturer
TriQuint (Qorvo)
Product Category
Transistors - FETs, MOSFETs - Single
Type
RF Power MOSFET
Packaging
Tray
Part-Aliases
1123811
Technology
GaN Si
Gain
14 dB
Output-Power
107 W
Pd-Power-Dissipation
144 W
Operating-Frequency
3.5 GHz
Vgs-Gate-Source-Voltage
145 V
Id-Continuous-Drain-Current
12 A
Vds-Drain-Source-Breakdown-Voltage
28 V
Vgs-th-Gate-Source-Threshold-Voltage
- 2.9 V
Transistor-Polarity
N-Channel
Tags
TGF2929-F, TGF292, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF2929-FL
DISTI # 772-TGF2929-FL
QorvoRF MOSFET Transistors DC-3.5GHz 100W 28V GaN
RoHS: Compliant
11
  • 1:$375.0000
Image Part # Description
TGF2929-HM

Mfr.#: TGF2929-HM

OMO.#: OMO-TGF2929-HM

RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
TGF2965-SM

Mfr.#: TGF2965-SM

OMO.#: OMO-TGF2965-SM

RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
TGF2933

Mfr.#: TGF2933

OMO.#: OMO-TGF2933

RF JFET Transistors DC-25GHz 7Watt NF 1.3dB GaN
TGF2941

Mfr.#: TGF2941

OMO.#: OMO-TGF2941

RF JFET Transistors DC-25GHz 4Watt NF 1.3dB GaN
TGF2929-FS

Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2979-SM

Mfr.#: TGF2979-SM

OMO.#: OMO-TGF2979-SM-318

RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
TGF2960

Mfr.#: TGF2960

OMO.#: OMO-TGF2960-1190

New and Original
TGF2960-SD.

Mfr.#: TGF2960-SD.

OMO.#: OMO-TGF2960-SD--1190

New and Original
TGF2961

Mfr.#: TGF2961

OMO.#: OMO-TGF2961-1190

New and Original
TGF2961-SD

Mfr.#: TGF2961-SD

OMO.#: OMO-TGF2961-SD-1190

New and Original
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of TGF2929-FL is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$562.50
$562.50
10
$534.38
$5 343.75
100
$506.25
$50 625.00
500
$478.12
$239 062.50
1000
$450.00
$450 000.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Top