IRF3710ZPBF

Mfr. #:: IRF3710ZPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 100V 59A 18mOhm 82nC Qg
Lifecycle:: New from this manufacturer.
Datasheet:: IRF3710ZPBF Datasheet
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HTML Datasheet:: IRF3710ZPBF Datasheet IRF3710ZPBF Datasheet (P4-P6)IRF3710ZPBF Datasheet (P7-P9)IRF3710ZPBF Datasheet (P10-P12)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 59 A

Rds On - Drain-Source Resistance:: 18 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 82 nC

Pd - Power Dissipation:: 160 W

Configuration:: Single

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001564400

Unit Weight:: 0.211644 oz

Tags: IRF3710Z, IRF3710, IRF371, IRF37, IRF3, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IRF3710ZPBF Description

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg

***eco: Transistor MOSFET N Channel 100 Volt 59 Amp 3-Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 100V 59A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W

*** Stop Electro: Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

***ark: Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:160W; No. of Pins:3Pins RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:170mJ; Capacitance Ciss Typ:2900pF; Current Id Max:59A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:18mohm; Package / Case:TO-220AB; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Power Dissipation Ptot Max:160W; Pulse Current Idm:240A; Reverse Recovery Time trr Typ:50ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 11Milliohms;ID 73A;TO-220AB;PD 190W;-55deg

***ure Electronics: Single N-Channel 100 V 14 mOhm 90 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH 100V 73A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 190 W

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull

***nell: MOSFET, N, 100V, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:73A; Resistance, Rds On:11mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220 (SOT-78B); Termination Type:Through Hole; Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:370mJ; Current, Idm Pulse:290A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation:190W; Power, Pd:190W; Power, Ptot:190W; Resistance, Rds on @ Vgs = 10V:0.014ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:35ns; Transistors, No. of:1; Typ Capacitance Ciss:3550pF; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V

***p One Stop: Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-220AB Tube

***emi: N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

***ure Electronics: N-Channel 100 V 16 mO PowerTrench Mosfet - TO-220AB

***enic: 100V 61A 150W 16m´Î@10V61A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; On Resistance Rds(On):0.014Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:182mJ; Capacitance Ciss Typ:2880pF; Current Id Max:61A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:14mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation Ptot Max:150W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:62ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***eco: Transistor MOSFET N Channel 100 Volt 57 Amp 3-Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 100V 57A 23mΩ 175°C TO-220 IRF3710PBF

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;TO-220AB;PD 2.5W

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-220AB Tube

***id Electronics: Transistor MOSFET N-Ch. 59A/100V TO220 IRF 3710 PBF

***ter Electronics: MOSFET, 100V, 57A, 23 MOHM, 86.7 NC QG, TO-220AB

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

***roFlash: Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N, 100V, 57A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:100V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: Power MOSFET, N-Channel, QFET®, 100 V, 57 A, 23 mΩ, TO-220

***et Europe: Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 100 V 23 mOhm Through Hole Mosfet - TO-220

***r Electronics: Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:57A; On State Resistance Max:23mohm; Package / Case:TO-220; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulse Current Idm:228A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V

***ure Electronics: Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 100V 42A 36mΩ 150°C TO-220 IRF1310NPBF

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***eco: Transistor HUF75639P3 N-Channel Power MOSFET 100Volt 56A TO-220AB

***ure Electronics: N-Channel 100 V 0.025 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

***emi: N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

***ow.cn: Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube

***r Electronics: Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET,N CH,100V,56A,TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Market price

Part #	Mfg.	Description	Stock	Price
IRF3710ZPBF DISTI # V99:2348_13890180	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 59A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	693	10000:$0.4682 5000:$0.5155 2500:$0.6072 1000:$0.6162 500:$0.7538 100:$0.8405 10:$1.0744 1:$1.1769
IRF3710ZPBF DISTI # IRF3710ZPBF-ND	Infineon Technologies AG	MOSFET N-CH 100V 59A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	2899In Stock	1000:$0.7837 500:$0.9928 100:$1.2801 50:$1.4630 1:$1.8300
IRF3710ZPBF DISTI # 29433850	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 59A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	693	12:$1.1691
IRF3710ZPBF DISTI # IRF3710ZPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB (Alt: IRF3710ZPBF) RoHS: Compliant Min Qty: 1000	Asia - 1000	1000:$0.5255 2000:$0.5039 3000:$0.4971 5000:$0.4777 10000:$0.4716 25000:$0.4598 50000:$0.4486
IRF3710ZPBF DISTI # IRF3710ZPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3710ZPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$1.1279 10:$1.0089 25:$1.0059 50:$1.0039 100:$0.8209 500:$0.7249 1000:$0.7229
IRF3710ZPBF DISTI # 97K2086	Infineon Technologies AG	MOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:59A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:160W,RoHS Compliant: Yes	248	1:$1.5600 10:$1.3300 100:$1.0300 500:$0.9030 1000:$0.7130 2500:$0.6320
IRF3710ZPBF. DISTI # 26AC0584	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:59A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:160W,No. of Pins:3Pins RoHS Compliant: Yes	0	1:$1.5600 10:$1.3300 100:$1.0300 500:$0.9030 1000:$0.7130 2500:$0.6320
IRF3710ZPBF DISTI # 70016957	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 14Milliohms,ID 59A,TO-220AB,PD 160W,-55deg RoHS: Compliant	0	750:$1.7000
IRF3710ZPBF DISTI # 942-IRF3710ZPBF	Infineon Technologies AG	MOSFET MOSFT 100V 59A 18mOhm 82nC Qg RoHS: Compliant	1685	1:$1.5600 10:$1.3300 100:$1.0300 500:$0.9030 1000:$0.7130
IRF3710ZPBF	Infineon Technologies AG	Single N-Channel 100 V 18 mOhm 120 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant	1980Tube	15:$0.7600 150:$0.6900 750:$0.6000
IRF3710ZPBF	International Rectifier	59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	50
IRF3710ZPBF	International Rectifier	59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	298	220:$1.2647 101:$1.3672 1:$2.7344
IRF3710ZPBF	International Rectifier	59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	496	433:$1.2375 201:$1.3875 1:$3.0000
IRF3710ZPBF	International Rectifier		3
IRF3710ZPBF DISTI # 1657604	Infineon Technologies AG	MOSFET N-CHANNEL 100V 59A HEXFET TO220AB, TU	200	50:£0.6460
IRF3710ZPBF DISTI # 6886850	Infineon Technologies AG	MOSFET N-CHANNEL 100V 59A HEXFET TO220AB, PK	2084	2:£1.2100 10:£0.7550 20:£0.7300 40:£0.6950 100:£0.5800
IRF3710ZPBF DISTI # IRF3710ZPBF	Infineon Technologies AG	N-Ch 100V 59A 160W 0,018R TO220AB RoHS: Compliant	760	10:€0.7875 50:€0.5475 200:€0.4875 500:€0.4695
IRF3710ZPBF DISTI # C1S327400157568	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 59A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1000	500:$1.0300 200:$1.1800 100:$1.1900 50:$1.2100 10:$1.4900 1:$1.8300
IRF3710ZPBF DISTI # C1S322000480250	Infineon Technologies AG	MOSFETs RoHS: Compliant	693	500:$0.7547 100:$0.8495 10:$1.0400
IRF3710ZPBF DISTI # 1013470	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	558	5:£0.7450 25:£0.6590 100:£0.5920 250:£0.5570 500:£0.5230
IRF3710ZPBF DISTI # 1013470	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	248	1:$2.4700 10:$2.1000 100:$1.6300 500:$1.4300 1000:$1.1300 2500:$1.0000

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IRF3710ZPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes