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FDP050AN06A0

FDP050AN06A0
Mfr. #:
FDP050AN06A0
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET N-Channel PowerTrench
Lifecycle:
New from this manufacturer.
Datasheet:
FDP050AN06A0 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FDP050AN06A0 more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
5 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
245 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PowerTrench
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FDP050AN06A0
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
29 ns
Product Type:
MOSFET
Rise Time:
160 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
28 ns
Typical Turn-On Delay Time:
16 ns
Part # Aliases:
FDP050AN06A0_NL
Unit Weight:
0.063493 oz
Tags
FDP050, FDP05, FDP0, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**r
    E**r
    RU

    It is not a real 2SK117.Drain current should not exceed 14mA (usually about 10mA), but the real measured values are more than a 20mA. So they are much more worse than a genuine.Refund received.

    2019-06-23
    Y***a
    Y***a
    RU

    Ok

    2019-06-05
***el Electronic
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MOSFET, N CH, 60V, 18A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
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MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:84A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
***ment14 APAC
MOSFET, N, 60V, 81A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:84A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:12mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
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Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ment14 APAC
MOSFET, N, 55V, 150A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:4.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230W; Pulse Current Idm:600A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 150 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 4.9 / Gate-Source Voltage V = 20 / Fall Time ns = 82 / Rise Time ns = 110 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230
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***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 82 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 20 / Fall Time ns = 48 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 230
***ment14 APAC
MOSFET, N, 75V, 82A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:82A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:13mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
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***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:85A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Alternate Case Style:SOT-78B; Current, Idm Pulse:300A; Device Marking:FQP85N06; No. of Pins:3; Power Dissipation:160W; Power, Pd:160W; Resistance, Rds on Max:0.01ohm; Voltage, Vds Max:60V; Voltage, Vgs th Max:4V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
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These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; Device Marking:RFP70N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Part # Mfg. Description Stock Price
FDP050AN06A0
DISTI # 26637324		ON SemiconductorFET 60V 5.0 MOHM TO2201600
  • 800:$1.3840
FDP050AN06A0
DISTI # 24246661		ON SemiconductorFET 60V 5.0 MOHM TO2201167
  • 11:$0.9719
FDP050AN06A0
DISTI # FDP050AN06A0-ND		ON SemiconductorMOSFET N-CH 60V 80A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Bulk		1724In Stock
  • 1000:$1.2754
  • 500:$1.5393
  • 100:$1.8735
  • 10:$2.3310
  • 1:$2.5900
FDP050AN06A0
DISTI # V36:1790_06359183		ON SemiconductorFET 60V 5.0 MOHM TO2200
  • 800000:$1.0280
  • 400000:$1.0300
  • 80000:$1.1540
  • 8000:$1.3520
  • 800:$1.3840
FDP050AN06A0
DISTI # FDP050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP050AN06A0)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 2625
  • 500:$0.9649
  • 250:$0.9899
  • 150:$1.0029
  • 100:$1.0159
  • 50:$1.0219
FDP050AN06A0
DISTI # FDP050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP050AN06A0)
RoHS: Compliant
Min Qty: 1		Europe - 640
  • 1000:€0.9039
  • 500:€0.9379
  • 100:€0.9739
  • 50:€1.0129
  • 25:€1.0549
  • 10:€1.1509
  • 1:€1.2659
FDP050AN06A0
DISTI # FDP050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP050AN06A0)
RoHS: Compliant
Min Qty: 256
Container: Bulk		Americas - 0
  • 256:$1.1900
  • 512:$1.1900
  • 768:$1.1900
  • 1280:$1.1900
  • 2560:$1.1900
FDP050AN06A0
DISTI # 31Y1384		ON SemiconductorMOSFET, N CH, 60V, 18A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes673
  • 1000:$1.1200
  • 500:$1.2800
  • 100:$1.4600
  • 10:$1.8400
  • 1:$2.1600
FDP050AN06A0
DISTI # 512-FDP050AN06A0		ON SemiconductorMOSFET N-Channel PowerTrench
RoHS: Compliant		1343
  • 1:$2.1400
  • 10:$1.8200
  • 100:$1.4500
  • 500:$1.2700
  • 1000:$1.0600
FDP050AN06A0_Q
DISTI # 512-FDP050AN06A0_Q		ON SemiconductorMOSFET N-Channel PowerTrench
RoHS: Not compliant		0
    FDP050AN06A0Fairchild Semiconductor CorporationPower Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		26791
    • 1000:$1.2900
    • 500:$1.3600
    • 100:$1.4100
    • 25:$1.4700
    • 1:$1.5900
    FDP050AN06A0Fairchild Semiconductor Corporation 30
      FDP050AN06A0
      DISTI # FDP050AN06A0      		ON SemiconductorTransistor: N-MOSFET,unipolar,60V,18A,245W,TO220AB26
      • 100:$2.1200
      • 25:$2.3500
      • 5:$2.9300
      • 1:$3.4000
      FDP050AN06A0Fairchild Semiconductor CorporationPower Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		800
        FDP050AN06A0
        DISTI # 2454156        		ON SemiconductorMOSFET, N CH, 60V, 18A, TO-220AB-3
        RoHS: Compliant        		673
        • 500:$1.9500
        • 100:$2.2400
        • 10:$2.8000
        • 1:$3.2900
        FDP050AN06A0
        DISTI # 2454156        		ON SemiconductorMOSFET, N CH, 60V, 18A, TO-220AB-3873
        • 500:£0.9800
        • 250:£1.0500
        • 100:£1.1200
        • 10:£1.4200
        • 1:£1.8700
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        Availability
        Stock:
        Available
        On Order:
        1984
        Enter Quantity:
        Current price of FDP050AN06A0 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $2.46
        $2.46
        10
        $2.09
        $20.90
        100
        $1.67
        $167.00
        500
        $1.46
        $730.00
        1000
        $1.21
        $1 210.00
        2500
        $1.20
        $3 000.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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