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FDS3670

FDS3670
Mfr. #:
FDS3670
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SO-8 N-CH 100V
Lifecycle:
New from this manufacturer.
Datasheet:
FDS3670 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDS3670 DatasheetFDS3670 Datasheet (P4-P6)FDS3670 Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
6.3 A
Rds On - Drain-Source Resistance:
22 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
3.9 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
31 S
Fall Time:
25 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
56 ns
Typical Turn-On Delay Time:
16 ns
Part # Aliases:
FDS3670_NL
Unit Weight:
0.002998 oz
Tags
FDS3670, FDS367, FDS36, FDS3, FDS
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***trelec
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***nell
MOSFET N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.9A; Fall Time tf: 11ns; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 55A; Rise Time: 20ns; Termination Type: Surface Mount Device; Voltage Vgs Max: 20V
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Part # Mfg. Description Stock Price
FDS3670
DISTI # FDS3670-ND		ON SemiconductorMOSFET N-CH 100V 6.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDS3670
    DISTI # 512-FDS3670    		ON SemiconductorMOSFET SO-8 N-CH 100V
    RoHS: Compliant    		0
      FDS3670Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 6.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		31237
      • 1000:$1.5300
      • 500:$1.6100
      • 100:$1.6700
      • 25:$1.7400
      • 1:$1.8800
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      Availability
      Stock:
      Available
      On Order:
      3000
      Enter Quantity:
      Current price of FDS3670 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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