BUZ30AHXKSA1

Mfr. #:: BUZ30AHXKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 200V 21A TO220FP-3
Lifecycle:: New from this manufacturer.
Datasheet:: BUZ30AHXKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 21 A

Rds On - Drain-Source Resistance:: 100 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.1 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: -

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 125 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: SIPMOS

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 6 S

Fall Time:: 90 ns

Product Type:: MOSFET

Rise Time:: 70 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 250 ns

Typical Turn-On Delay Time:: 30 ns

Part # Aliases:: BUZ30A BUZ3AHXK H SP000682990

Unit Weight:: 0.211644 oz

Tags: BUZ30AH, BUZ30A, BUZ30, BUZ3, BUZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BUZ30AHXKSA1 Description

***ure Electronics: Single N-Channel 200 V 130 mOhm SIPMOS® Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube

***nell: MOSFET, N-CH, 200V, 21A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe

***ineon: Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

Market price

Part #	Mfg.	Description	Stock	Price
BUZ30AHXKSA1 DISTI # V99:2348_06391701	Infineon Technologies AG	Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	889	2500:$0.8873 500:$0.9229 100:$1.2013 25:$1.4025 10:$1.7462 1:$2.2540
BUZ30AHXKSA1 DISTI # V36:1790_06391701	Infineon Technologies AG	Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	500000:$0.8231 250000:$0.8233 50000:$0.8389 5000:$0.8647 500:$0.8689
BUZ30AHXKSA1 DISTI # BUZ30AHXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 200V 21A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	684In Stock	5000:$0.9645 2500:$1.0016 500:$1.2984 100:$1.5803 25:$1.8548 10:$1.9660 1:$2.1900
BUZ30AHXKSA1 DISTI # 31994526	Infineon Technologies AG	Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	3273	15:$0.7114
BUZ30AHXKSA1 DISTI # 32342715	Infineon Technologies AG	Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	1000	500:$1.2219
BUZ30AHXKSA1 DISTI # 30332216	Infineon Technologies AG	Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	889	8:$2.2540
BUZ30AHXKSA1 DISTI # BUZ30AHXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 21A 3-Pin(3+tab) TO-220 Tube - Rail/Tube (Alt: BUZ30AHXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$0.7659 2500:$0.7799 1500:$0.8079 1000:$0.8379 500:$0.8689
BUZ30AHXKSA1 DISTI # BUZ30AHXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 21A 3-Pin(3+tab) TO-220 Tube - Bulk (Alt: BUZ30AHXKSA1) RoHS: Compliant Min Qty: 481 Container: Bulk	Americas - 0	4810:$0.6599 2405:$0.6719 1443:$0.6959 962:$0.7219 481:$0.7489
BUZ30AHXKSA1 DISTI # 68AC4438	Infineon Technologies AG	MOSFET, N-CH, 200V, 21A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes	360	5000:$0.9280 2500:$0.9640 1000:$1.0300 500:$1.2400 100:$1.4200 10:$1.7800 1:$2.0900
BUZ30AHXKSA1	Infineon Technologies AG	Single N-Channel 200 V 130 mOhm SIPMOS Power Mosfet - TO-220-3 RoHS: Not Compliant	1480Tube	25:$1.5200 100:$0.9450 250:$0.8600 500:$0.8000 1000:$0.7450
BUZ30A H DISTI # 726-BUZ30AH	Infineon Technologies AG	MOSFET N-Ch 200V 21A TO220FP-3 RoHS: Compliant	815	1:$2.0700 10:$1.7600 100:$1.4100 500:$1.2300 1000:$1.0200 2500:$0.9540 5000:$0.9190
BUZ30AHXKSA1 DISTI # 726-BUZ30AHXKSA1	Infineon Technologies AG	MOSFET N-Ch 200V 21A TO220FP-3 RoHS: Compliant	530	1:$2.0700 10:$1.7600 100:$1.4100 500:$1.2300 1000:$1.0200 2500:$0.9540 5000:$0.9190
BUZ30AHXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB RoHS: Compliant	734	1000:$0.6800 500:$0.7200 100:$0.7500 25:$0.7800 1:$0.8400
BUZ30AHXKSA1 DISTI # 298342P	Infineon Technologies AG	MOSFET N-CHANNEL 200V 21A OPTIMOS TO220, TU	1121	100:£1.5800 50:£1.7000 20:£1.8300 5:£2.0000
BUZ30AHXKSA1 DISTI # 298342	Infineon Technologies AG	MOSFET N-CHANNEL 200V 21A OPTIMOS TO220, EA	714	100:£1.5800 50:£1.7000 20:£1.8300 5:£2.0000 1:£2.4400
BUZ30AHXKSA1 DISTI # 8922214	Infineon Technologies AG	MOSFET N-CHANNEL 200V 21A OPTIMOS TO220, PK	530	200:£0.9440 100:£0.9620 50:£0.9820 20:£1.0780 10:£1.1980
BUZ30AHXKSA1 DISTI # BUZ30AHXKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,200V,21A,125W,PG-TO220-3	596	250:$0.9500 50:$1.0100 10:$1.1400 3:$1.2700 1:$1.4200
BUZ30AHXKSA1 DISTI # 2480790	Infineon Technologies AG	MOSFET, N-CH, 200V, 21A, TO-220-3 RoHS: Compliant	182	2500:$1.4700 1000:$1.5800 500:$1.8900 100:$2.1700 10:$2.7100 1:$3.1900
BUZ30AHXKSA1 DISTI # 2480790	Infineon Technologies AG	MOSFET, N-CH, 200V, 21A, TO-220-3	172	500:£0.8880 250:£0.9540 100:£1.0200 10:£1.3000 1:£1.7000
BUZ30AHXKSA1 DISTI # XSFP00000041067	Infineon Technologies AG	RoHS: Compliant	799 in Stock0 on Order	799:$1.2600 106:$1.3500
BUZ30AHXKSA1 DISTI # XSKDRABV0051869	Infineon Technologies AG	RoHS: Compliant	1000 in Stock0 on Order	1000:$0.9973 500:$1.0700

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Availability

Stock:: 510
On Order:: 2493
Enter Quantity:

Current price of BUZ30AHXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.07~~; ~~$2.07~~

10: ~~$1.76~~; ~~$17.60~~

100: ~~$1.41~~; ~~$141.00~~

500: ~~$1.23~~; ~~$615.00~~

1000: ~~$1.02~~; ~~$1 020.00~~

2500: ~~$0.95~~; ~~$2 385.00~~

5000: ~~$0.92~~; ~~$4 595.00~~

10000: ~~$0.88~~; ~~$8 840.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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BUZ30AHXKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes