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IPB80N08S2-07

IPB80N08S2-07
Mfr. #:
IPB80N08S2-07
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS
Lifecycle:
New from this manufacturer.
Datasheet:
IPB80N08S2-07 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB80N08S2-07 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
75 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
6.5 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
OptiMOS
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
30 ns
Product Type:
MOSFET
Rise Time:
50 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
61 ns
Typical Turn-On Delay Time:
26 ns
Part # Aliases:
IPB80N08S207ATMA1 IPB8N8S27XT SP000219048
Unit Weight:
0.139332 oz
Tags
IPB80N08S2, IPB80N08, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB80N08S207ATMA1
DISTI # V72:2272_06383089		Infineon Technologies AGTrans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		690
  • 500:$1.3559
  • 250:$1.5040
  • 100:$1.7690
  • 25:$2.2890
  • 10:$2.5550
  • 1:$3.2252
IPB80N08S207ATMA1
DISTI # V36:1790_06383089		Infineon Technologies AGTrans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000:$1.3910
IPB80N08S207ATMA1
DISTI # IPB80N08S207ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 75V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.7559
IPB80N08S207ATMA1
DISTI # 31225870		Infineon Technologies AGTrans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		690
  • 5:$3.2252
IPB80N08S207ATMA1
DISTI # SP000219048		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin TO-263 T/R (Alt: SP000219048)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 47000
  • 10000:€1.2900
  • 6000:€1.3900
  • 4000:€1.4900
  • 1000:€1.5900
  • 2000:€1.5900
IPB80N08S207XT
DISTI # IPB80N08S207ATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80N08S207ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 4000:$1.4900
  • 6000:$1.4900
  • 10000:$1.4900
  • 2000:$1.5900
  • 1000:$1.6900
IPB80N08S207ATMA1
DISTI # 49AC0286		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 75V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes890
  • 1000:$1.3300
  • 500:$1.4000
  • 250:$1.5400
  • 100:$1.8000
  • 50:$2.0600
  • 25:$2.3100
  • 10:$2.5600
  • 1:$2.9100
IPB80N08S2-07
DISTI # 726-IPB80N08S207		Infineon Technologies AGMOSFET N-Ch 75V 80A D2PAK-2 OptiMOS
RoHS: Compliant		939
  • 1:$2.6600
  • 10:$2.2600
  • 100:$1.8100
  • 500:$1.5900
  • 1000:$1.3200
  • 2000:$1.2200
  • 5000:$1.1800
IPB80N08S207ATMA1
DISTI # 2839454		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 75V, TO-263608
  • 100:£1.3600
  • 10:£1.3900
  • 1:£1.4200
IPB80N08S207ATMA1
DISTI # 2839454		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 75V, TO-263
RoHS: Compliant		890
  • 1000:$1.8500
  • 500:$1.8900
  • 250:$1.9900
  • 100:$2.1000
  • 10:$2.3700
  • 1:$2.5400
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Availability
Stock:
939
On Order:
2922
Enter Quantity:
Current price of IPB80N08S2-07 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.66
$2.66
10
$2.26
$22.60
100
$1.81
$181.00
500
$1.59
$795.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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