We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
BUZ111SL-E3045A | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2000 |
|
BUZ111SLE3045A | Siemens | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2000 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: BUZ111SLE3045A OMO.#: OMO-BUZ111SLE3045A-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: BUZ111S OMO.#: OMO-BUZ111S-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
Mfr.#: BUZ111SE045A OMO.#: OMO-BUZ111SE045A-1190 |
New and Original | |
Mfr.#: BUZ111SE3045 OMO.#: OMO-BUZ111SE3045-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: BUZ111SE3045A OMO.#: OMO-BUZ111SE3045A-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: BUZ111SL OMO.#: OMO-BUZ111SL-1190 |
MOSFET Transistor, N-Channel, TO-220AB | |
Mfr.#: BUZ111SL-E3045 OMO.#: OMO-BUZ111SL-E3045-1190 |
New and Original | |
Mfr.#: BUZ111SL-E3045A OMO.#: OMO-BUZ111SL-E3045A-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |