BSZ088N03LSGATMA1

Mfr. #:: BSZ088N03LSGATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CH 30V 40A TSDSON-8
Lifecycle:: New from this manufacturer.
Datasheet:: BSZ088N03LSGATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Tags: BSZ088N03LSG, BSZ088N03L, BSZ088, BSZ08, BSZ0, BSZ

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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Packaging Boxes

BSZ088N03LSGATMA1 Description

***ure Electronics: Single N-Channel 30 V 8.8 mOhm 16 nC OptiMOS Power Mosfet - TSDSON-8

***ment14 APAC: MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 8 mOhm 16 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 8 mOhm 21 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 53A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 17.9 mOhm 14 nC OptiMOS Power Mosfet - TDSON-8

***el Electronic: Surface Mount Ceramic Multilayer Capacitor 0.0015uF 5% C0G 50V 0805 Paper T/R

***ark: Mosfet, N-Ch, 30V, 50A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0066Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipationrohs Compliant: Yes

***ure Electronics: FDMS7680 Series 30 V 6.9 mOhm N-Channel PowerTrench Mosfet - POWER-56

***emi: N-Channel PowerTrench® MOSFET 30V, 6.9mΩ

***r Electronics: Power Field-Effect Transistor, 14A I(D), 30V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***emi: N-Channel PowerTrench® MOSFET 30V, 21A, 8.5mΩ

***r Electronics: Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***enic: 30V 51A 6.3m´Î@10V13.5A 42W 1.9V@250uA 161pF@15V N Channel 1.195nF@15V 13nC@0~5V -55¡Í~+150¡Í@(Tj) Power-56-8 MOSFETs ROHS

***el Electronic: Embedded - Microcontrollers 3 (168 Hours) 145-TFLGA 103 96K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit IC MCU 32BIT 512KB FLASH 145LGA

***rchild Semiconductor: The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

***ure Electronics: N-Channel 30 V 7.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 14A, 7.6mΩ

***Yang: Trans MOSFET N-CH 30V 14A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

***nell: MOSFET, N CH, 30V, 14A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0063ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C

Market price

Part #	Mfg.	Description	Stock	Price
BSZ088N03LSGATMA1 DISTI # V72:2272_06390944	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	3000:$0.3165 1000:$0.3199 500:$0.4031 250:$0.5135 100:$0.5189 25:$0.6806 10:$0.7561 1:$0.8641
BSZ088N03LSGATMA1 DISTI # V36:1790_06390944	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	0	5000000:$0.2394 2500000:$0.2396 500000:$0.2536 50000:$0.2763 5000:$0.2800
BSZ088N03LSGATMA1 DISTI # BSZ088N03LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5690In Stock	1000:$0.3418 500:$0.4272 100:$0.5404 10:$0.7050 1:$0.8000
BSZ088N03LSGATMA1 DISTI # BSZ088N03LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5690In Stock	1000:$0.3418 500:$0.4272 100:$0.5404 10:$0.7050 1:$0.8000
BSZ088N03LSGATMA1 DISTI # BSZ088N03LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	25000:$0.2627 10000:$0.2696 5000:$0.2800
BSZ088N03LSGATMA1 DISTI # 32740486	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	32:$0.8641
BSZ088N03LSGATMA1 DISTI # BSZ088N03LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ088N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.1999 30000:$0.2039 20000:$0.2109 10000:$0.2189 5000:$0.2269
BSZ088N03LSGATMA1 DISTI # SP000304138	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP (Alt: SP000304138) RoHS: Compliant Min Qty: 5000	Europe - 0	50000:€0.2109 30000:€0.2269 20000:€0.2459 10000:€0.2689 5000:€0.3279
BSZ088N03LS G DISTI # 726-BSZ088N03LSG	Infineon Technologies AG	MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 RoHS: Compliant	4368	1:$0.7300 10:$0.6130 100:$0.3950 1000:$0.3160 5000:$0.2670 10000:$0.2570 25000:$0.2470

Image	Part #	Description
	Mfr.#: BSZ088N03LS G OMO.#: OMO-BSZ088N03LS-G	MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
	Mfr.#: BSZ088N03MS G OMO.#: OMO-BSZ088N03MS-G	MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
	Mfr.#: BSZ088N03LS G OMO.#: OMO-BSZ088N03LS-G-1190	MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
	Mfr.#: BSZ088N03LSG OMO.#: OMO-BSZ088N03LSG-1190	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Bulk (Alt: BSZ088N03LSG)
	Mfr.#: BSZ088N03LSGATMA1 OMO.#: OMO-BSZ088N03LSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 40A TSDSON-8
	Mfr.#: BSZ088N03LSGATMA1 , TFZV OMO.#: OMO-BSZ088N03LSGATMA1-TFZV-1190	New and Original
	Mfr.#: BSZ088N03M OMO.#: OMO-BSZ088N03M-1190	New and Original
	Mfr.#: BSZ088N03MSG OMO.#: OMO-BSZ088N03MSG-1190	Trans MOSFET N-CH 30V 11A 8-Pin TSDSON T/R - Bulk (Alt: BSZ088N03MSG)
	Mfr.#: BSZ088N03MSGATMA1 OMO.#: OMO-BSZ088N03MSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 40A TSDSON-8
	Mfr.#: BSZ088N03MS G OMO.#: OMO-BSZ088N03MS-G-317	RF Bipolar Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M

BSZ088N03LSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes