 | |  | |
| PartNumber | BSZ088N03LS G | BSZ088N03MS G | BSZ088N03LSGATMA1 |
| Description | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | MOSFET N-CH 30V 40A TSDSON-8 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSDSON-8 | TSDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 12 A | 11 A | - |
| Rds On Drain Source Resistance | 8.8 mOhms | 8.8 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.1 W | 2.1 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | OptiMOS 3 | OptiMOS 3M | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 2.6 ns | 2.4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.8 ns | 3 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15 ns | 18 ns | - |
| Typical Turn On Delay Time | 3.3 ns | 4.3 ns | - |
| Part # Aliases | BSZ088N03LSGATMA1 BSZ88N3LSGXT SP000304138 | BSZ088N03MSGATMA1 BSZ88N3MSGXT SP000311509 | - |
| Unit Weight | 0.070548 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ088N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | |
| BSZ088N03MS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ088N03LSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ088N03MSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
Infineon Technologies |
BSZ088N03MSGATMA1 | MOSFET LV POWER MOS | |
| BSZ088N03LS | New and Original | ||
| BSZ088N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ088N03LSG | Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Bulk (Alt: BSZ088N03LSG) | ||
| BSZ088N03LSGATMA1 , TFZV | New and Original | ||
| BSZ088N03M | New and Original | ||
| BSZ088N03MSG | Trans MOSFET N-CH 30V 11A 8-Pin TSDSON T/R - Bulk (Alt: BSZ088N03MSG) | ||
| BSZ088N03MSGATMA1 , TFZV | New and Original | ||
| BSZ088N03MS G | RF Bipolar Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M |