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Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
SPB03N60S5E3045A | Infineon Technologies AG | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1000 |
Image | Part # | Description |
---|---|---|
Mfr.#: SPB03N60C3 OMO.#: OMO-SPB03N60C3-126 |
IGBT Transistors MOSFET N-Ch 600V 3.2A D2PAK-2 CoolMOS C3 | |
Mfr.#: SPB03N605S OMO.#: OMO-SPB03N605S-1190 |
New and Original | |
Mfr.#: SPB03N60C3ATMA1 |
MOSFET N-CH 650V 3.2A D2PAK | |
Mfr.#: SPB03N60C3E3045 OMO.#: OMO-SPB03N60C3E3045-1190 |
- Bulk (Alt: SPB03N60C3E3045) | |
Mfr.#: SPB03N60S5 OMO.#: OMO-SPB03N60S5-1190 |
MOSFET N-Ch 600V 3.2A D2PAK-2 CoolMOS S5 | |
Mfr.#: SPB03N60S5E3045A OMO.#: OMO-SPB03N60S5E3045A-1190 |
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |