We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
SPB03N60C3ATMA1 DISTI # SPB03N60C3ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 650V 3.2A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
SPB03N60C3ATMA1 DISTI # SPB03N60C3ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 650V 3.2A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
SPB03N60C3ATMA1 DISTI # SPB03N60C3ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 650V 3.2A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
SPB03N60C3 DISTI # SPB03N60C3 | Infineon Technologies AG | Trans MOSFET N-CH 600V 3.2A 3-Pin TO-263 T/R - Bulk (Alt: SPB03N60C3) RoHS: Not Compliant Min Qty: 758 Container: Bulk | Americas - 0 |
|
SPB03N60C3E3045 DISTI # SPB03N60C3E3045 | Infineon Technologies AG | - Bulk (Alt: SPB03N60C3E3045) RoHS: Not Compliant Min Qty: 1137 Container: Bulk | Americas - 0 |
|
SPB03N60C3ATMA1 DISTI # SPB03N60C3ATMA1 | Infineon Technologies AG | - Bulk (Alt: SPB03N60C3ATMA1) RoHS: Compliant Min Qty: 758 Container: Bulk | Americas - 0 |
|
SPB03N60C3 DISTI # 726-SPB03N60C3 | Infineon Technologies AG | MOSFET N-Ch 600V 3.2A D2PAK-2 CoolMOS C3 RoHS: Compliant | 0 | |
SPB03N60C3 | Infineon Technologies AG | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 11154 |
|
SPB03N60C3E3045 | Infineon Technologies AG | RoHS: Not Compliant | 750 |
|
SPB03N60C3ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 2000 |
|
SPB03N60C3 | Infineon Technologies AG | 514 | ||
SPB03N60C3 | INF | 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 1600 |
|
SPB03N60C3 DISTI # 1471780 | Infineon Technologies AG | MOSFET, N, 600V, D2-PAK RoHS: Compliant | 0 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: SPB03N60C3 OMO.#: OMO-SPB03N60C3-126 |
IGBT Transistors MOSFET N-Ch 600V 3.2A D2PAK-2 CoolMOS C3 | |
Mfr.#: SPB03N605S OMO.#: OMO-SPB03N605S-1190 |
New and Original | |
Mfr.#: SPB03N60C3ATMA1 |
MOSFET N-CH 650V 3.2A D2PAK | |
Mfr.#: SPB03N60C3E3045 OMO.#: OMO-SPB03N60C3E3045-1190 |
- Bulk (Alt: SPB03N60C3E3045) | |
Mfr.#: SPB03N60S5 OMO.#: OMO-SPB03N60S5-1190 |
MOSFET N-Ch 600V 3.2A D2PAK-2 CoolMOS S5 | |
Mfr.#: SPB03N60S5E3045A OMO.#: OMO-SPB03N60S5E3045A-1190 |
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |