SI3588DV-T1-E3

Mfr. #:: SI3588DV-T1-E3
Manufacturer:: Vishay
Description:: IGBT Transistors MOSFET 20V 3.0/2.2A
Lifecycle:: New from this manufacturer.
Datasheet:: SI3588DV-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI3588DV-T1-E3 Datasheet SI3588DV-T1-E3 Datasheet (P4-P6)SI3588DV-T1-E3 Datasheet (P7-P8)
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Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Digi-ReelR

Part-Aliases: SI3588DV-E3

Unit-Weight: 0.000705 oz

Mounting-Style: SMD/SMT

Tradename: TrenchFET

Package-Case: SOT-23-6 Thin, TSOT-23-6

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 6-TSOP

Configuration: 1 N-Channel 1 P-Channel

FET-Type: N and P-Channel

Power-Max: 830mW, 83mW

Transistor-Type: 1 N-Channel 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

Input-Capacitance-Ciss-Vds: -

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 2.5A, 570mA

Rds-On-Max-Id-Vgs: 80 mOhm @ 3A, 4.5V

Vgs-th-Max-Id: 450mV @ 250μA (Min)

Gate-Charge-Qg-Vgs: 7.5nC @ 4.5V

Pd-Power-Dissipation: 830 mW

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 30 ns 29 ns

Rise-Time: 30 ns 29 ns

Vgs-Gate-Source-Voltage: 8 V

Id-Continuous-Drain-Current: 2.5 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Resistance: 80 mOhms 145 mOhms

Transistor-Polarity: N-Channel P-Channel

Typical-Turn-Off-Delay-Time: 28 ns 24 ns

Typical-Turn-On-Delay-Time: 12 ns 12 ns

Channel-Mode: Enhancement

Tags: SI3588D, SI3588, SI358, SI35, SI3

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3588DV-T1-E3 Description

***ical: Trans MOSFET N/P-CH 20V 2.5A/0.57A 6-Pin TSOP T/R

***i-Key: MOSFET N/P-CH 20V 2.5A 6TSOP

***ser: Dual MOSFETs 20V 3.0/2.2A

***nell: MOSFET, P, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:Dual N / P Channel; Voltage, Vds Typ:20V; Current, Id Cont:3A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:4.5V; Case Style:TSOP-6

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TSOP-6 ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, P, TSOP-6; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:450mV; Power Dissipation Pd:830mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):80mohm; Package / Case:TSOP-6; Power Dissipation Pd:830mW; Voltage Vds Typ:20V; Voltage Vgs Max:450mV; Voltage Vgs Rds on Measurement:4.5V

Market price

Part #	Mfg.	Description	Stock	Price
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI3588DV-T1-E3 DISTI # 781-SI3588DV-E3	Vishay Intertechnologies	MOSFET 20V 3.0/2.2A RoHS: Compliant	0
SI3588DV-T1-E3 DISTI # 1612643RL	Vishay Intertechnologies	MOSFET, P, TSOP-6 RoHS: Compliant	0	1:$2.1600 10:$1.7400 100:$1.3900 250:$1.2000 500:$1.0400 1000:$0.9660 3000:$0.9320
SI3588DV-T1-E3 DISTI # 1612643	Vishay Intertechnologies	MOSFET, P, TSOP-6 RoHS: Compliant	0	1:$2.1600 10:$1.7400 100:$1.3900 250:$1.2000 500:$1.0400 1000:$0.9660 3000:$0.9320

Image	Part #	Description
	Mfr.#: SI3588DV-T1-GE3 OMO.#: OMO-SI3588DV-T1-GE3	MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3
	Mfr.#: SI3588DV-T1-E3 OMO.#: OMO-SI3588DV-T1-E3-VISHAY	IGBT Transistors MOSFET 20V 3.0/2.2A
	Mfr.#: SI3588DV-T1-GE3 OMO.#: OMO-SI3588DV-T1-GE3-VISHAY	MOSFET N/P-CH 20V 2.5A 6-TSOP
	Mfr.#: SI3588DV-T1E3 OMO.#: OMO-SI3588DV-T1E3-1190	New and Original

SI3588DV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes