PartNumber | SI3552DV-T1-GE3 | SI3552DV-T1-E3 | SI3529DV-T1-GE3 |
Description | MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR | MOSFET RECOMMENDED ALT 781-SI3552DV-GE3 | MOSFET RECOMMENDED ALT 781-SI3590DV-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSOP-6 | TSOP-6 | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel, P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 2.5 A, 1.8 A | - | - |
Rds On Drain Source Resistance | 105 mOhms, 200 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 3.2 nC, 3.6 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.15 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SI3 | SI3 | SI3 |
Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 4.3 S, 2.4 S | - | - |
Fall Time | 5 ns, 7 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 9 ns, 12 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 13 ns, 12 ns | - | - |
Typical Turn On Delay Time | 7 ns, 8 ns | - | - |
Part # Aliases | SI3552DV-GE3 | SI3552DV-E3 | SI3529DV-GE3 |
Unit Weight | 0.000705 oz | 0.000705 oz | 0.000705 oz |
Height | - | 1.1 mm | - |
Length | - | 3.05 mm | - |
Width | - | 1.65 mm | - |