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IRF7853PBF

IRF7853PBF
Mfr. #:
IRF7853PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 100V 1 N-CH HEXFET 18mOhms 28nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF7853PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7853PBF DatasheetIRF7853PBF Datasheet (P4-P6)IRF7853PBF Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
8.3 A
Rds On - Drain-Source Resistance:
14.4 mOhms
Vgs th - Gate-Source Threshold Voltage:
4.9 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
28 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Packaging:
Tube
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 N-Channel
Width:
3.9 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
11 S
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
6.6 ns
Factory Pack Quantity:
3800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
SP001566352
Unit Weight:
0.017870 oz
Tags
IRF7853, IRF785, IRF78, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S
***ure Electronics
Single N-Channel 100 V 18 mOhm 28 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 Package, SO8, RoHS
***p One Stop Global
Trans MOSFET N-CH 100V 8.3A 8-Pin SOIC T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, N, 100V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:8.3A; Cont Current Id @ 70°C:6.6; Current Id Max:8.3A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:66A; Rth:50; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Part # Mfg. Description Stock Price
IRF7853PBF
DISTI # 26562393		Infineon Technologies AGTrans MOSFET N-CH 100V 8.3A 8-Pin SOIC T/R3417
  • 19:$0.5208
IRF7853PBF
DISTI # IRF7853PBF-ND		Infineon Technologies AGMOSFET N-CH 100V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF7853PBF
    DISTI # C1S322000486537    		Infineon Technologies AGTrans MOSFET N-CH 100V 8.3A 8-Pin SOIC T/R
    RoHS: Compliant    		3417
    • 1000:$0.8600
    • 500:$0.9300
    • 100:$1.0300
    • 50:$1.2300
    • 25:$1.3800
    • 5:$1.9000
    IRF7853PBF
    DISTI # IRF7853PBF    		Infineon Technologies AGTrans MOSFET N-CH 100V 8.3A 8-Pin SOIC - Rail/Tube (Alt: IRF7853PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube    		Americas - 1605
      IRF7853PBF
      DISTI # 70017361      		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 14.4 Milliohms,ID 8.3A,SO-8,PD 2.5W,gFS 11S
      RoHS: Compliant      		0
      • 1:$1.7700
      • 10:$1.5600
      • 100:$1.3600
      • 500:$1.1800
      • 1000:$1.0400
      IRF7853PBF
      DISTI # 942-IRF7853PBF      		Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 18mOhms 28nC
      RoHS: Compliant      		3110
      • 1:$1.3600
      • 10:$1.1600
      • 100:$0.8870
      • 500:$0.7840
      • 1000:$0.6190
      • 2500:$0.5490
      • 10000:$0.5290
      IRF7853PBFTT Electronics ResistorsMOSFET Transistor, N-Channel, SO2890
      • 1830:$0.3850
      • 409:$0.4375
      • 1:$1.4000
      IRF7853PBFInternational RectifierMOSFET Transistor, N-Channel, SO848
      • 409:$0.4375
      • 72:$0.4900
      • 1:$1.4000
      IRF7853PBF
      DISTI # 6886888P      		Infineon Technologies AGMOSFET N-CHANNEL 100V 8.3A HEXFET SOIC8, TU40
      • 25:£0.8800
      • 100:£0.7700
      • 250:£0.7200
      • 500:£0.6800
      IRF7853PBFInternational Rectifier 
      RoHS: Compliant      		Europe - 285
        IRF7853PBF
        DISTI # 1298555RL        		Infineon Technologies AGMOSFET, N, 100V, SO-8
        RoHS: Compliant        		0
        • 1:$2.1600
        • 10:$1.8400
        IRF7853PBF
        DISTI # 1298555        		Infineon Technologies AGMOSFET, N, 100V, SO-8
        RoHS: Compliant        		0
        • 1:$2.1600
        • 10:$1.8400
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        FDB13AN06A0

        Mfr.#: FDB13AN06A0

        OMO.#: OMO-FDB13AN06A0-ON-SEMICONDUCTOR

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        LQM2HPN2R2MCHL

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        Mfr.#: NCV7344D13R2G

        OMO.#: OMO-NCV7344D13R2G-ON-SEMICONDUCTOR

        		 High Speed Low Power CAN, CAN FD Transceive
        Availability
        Stock:
        174
        On Order:
        2157
        Enter Quantity:
        Current price of IRF7853PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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