IRF7853PBF Datasheet IRF7853TRPBF, IRF7853PBF | P1-P3

www.irf.com 1

1/5/06

IRF7853PbF

HEXFET

®

Power MOSFET

l Primary Side Switch in Bridge Topology

in Universal Input (36-75Vin) Isolated

DC-DC Converters

l Primary Side Switch in Push-Pull

Topology for 18-36Vin Isolated DC-DC

Converters

l Secondary Side Synchronous

Rectification Switch for 15Vout

l Suitable for 48V Non-Isolated

Synchronous Buck DC-DC Applications

Benefits

Applications

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

OSS

to Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

Notes  through  are on page 8

SO-8

Top View

8

1

2

3

4

5

6

7

D

DG

S

A

S

A

PD - 97069

V

DSS

R

DS

(

on

)

max I

D

100V

18m

:

@VGS = 10V

8.3A

Absolute Maximum Ratings

Parameter Units

V

DS

Drain-to-Source Voltage V

V

GS

Gate-to-Source Voltage

I

D

@ T

A

= 25°C

Continuous Drain Current, V

GS

@ 10V A

I

D

@ T

A

= 70°C

Continuous Drain Current, V

GS

@ 10V

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C

Maximum Power Dissipation

W

Linear Derating Factor W/°C

dv/dt

Peak Diode Recovery dv/dt

V/ns

T

J

Operating Junction and °C

T

STG

Storage Temperature Range

Thermal Resistance

Parameter Typ. Max. Units

R

θJL

Junction-to-Drain Lead ––– 20 °C/W

R

θJA

Junction-to-Ambient (PCB Mount)

––– 50

2.5

Max.

8.3

6.6

66

100

± 20

5.1

-55 to + 150

0.02

IRF7853PbF

2 www.irf.com

S

D

G

St

a

ti

c

@ T

J

=

25°C (

un

l

ess

o

th

erw

i

se

spec

ifi

e

d)

Parameter Min. Typ. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 14.4 18

mΩ

V

GS(th)

Gate Threshold Voltage 3.0 ––– 4.9 V

I

DSS

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

D

ynam

i

c

@ T

J

=

25°C (

un

l

ess

o

th

erw

i

se

spec

ifi

e

d)

Parameter Min. Typ. Max. Units

gfs Forward Transconductance 11 ––– ––– S

Q

g

Total Gate Charge ––– 28 39

Q

gs

Gate-to-Source Charge ––– 7.8 ––– nC

Q

gd

Gate-to-Drain ("Miller") Charge ––– 10 –––

R

G

Gate Resistance ––– 1.4 –––

Ω

t

d(on)

Turn-On Delay Time ––– 13 –––

t

r

Rise Time ––– 6.6 –––

t

d(off)

Turn-Off Delay Time ––– 26 ––– ns

t

f

Fall Time ––– 6.0 –––

C

iss

Input Capacitance ––– 1640 –––

C

oss

Output Capacitance ––– 310 –––

C

rss

Reverse Transfer Capacitance ––– 71 ––– pF

C

oss

Output Capacitance ––– 1600 –––

C

oss

Output Capacitance ––– 180 –––

C

oss

eff. Effective Output Capacitance ––– 320 –––

Avalanche Characteristics

Parameter Units

E

AS

Single Pulse Avalanche Energy

mJ

I

AR

Avalanche Current

A

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 2.3

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 66

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.3 V

t

rr

Reverse Recovery Time ––– 45 68 ns

Q

rr

Reverse Recovery Charge ––– 84 130 nC

t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

V

GS

= 20V

V

GS

= -20V

Max.

V

GS

= 0V, V

DS

= 1.0V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 80V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 0V to 80V

V

GS

= 10V

V

DD

= 50V

I

D

= 5.0A

R

G

= 6.2Ω

T

J

= 25°C, I

S

= 5.0A, V

GS

= 0V

T

J

= 25°C, I

F

= 5.0A, V

DD

= 25V

di/dt = 100A/µs

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 8.3A

V

DS

= V

GS

, I

D

= 100µA

V

DS

= 100V, V

GS

= 0V

V

DS

= 100V, V

GS

= 0V, T

J

= 125°C

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Conditions

V

GS

= 10V

V

GS

= 0V

V

DS

= 25V

ƒ = 1.0MHz

610

5.0

Typ.

–––

Conditions

V

DS

= 25V, I

D

= 5.0A

I

D

= 5.0A

V

DS

= 50V

IRF7853PbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

0.01 0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 25°C

4.5V

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 150°C

4.5V

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

3.0 4.0 5.0 6.0 7.0

V

GS

, Gate-to-Source Voltage (V)

0.1

1.0

10.0

100.0

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

V

DS

= 25V

≤

60µs PULSE WIDTH

T

J

= 25°C

T

J

= 150°C

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 8.3A

V

GS

= 10V

IRF7853PBF

IRF7853PBF

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